Presentation | 2016-11-30 ReRAM Write Voltage Generator with Low Supply Voltage Operation and Optimized Comparator Bias-Current Scheme for IoT Edge Device Kota Tsurumi, Masahiro Tanaka, Ken Takeuchi, |
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PDF Download Page | PDF download Page Link |
Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | Resistive random access memory (ReRAM) is considered as candidates for IoT Edge device because of the high-speed and low power operation compared with the conventional NAND flash memory. The IoT edge device requires to merge sensor, memory and controller into one package for miniaturization. This paper has two proposals. First, the proposed boost converter is proposed to achieve 1.0 V operation and high speed ReRAM set/reset time, simultaneously. Finally, 0.6 V operation ReRAM program voltage generator with the 2 µA to 8 µA adaptive comparator current (ICMP) is proposed to achieve low ReRAM write voltage ripple (VRIPPLE) and high energy efficiency, simultaneously. The proposed boost converter reduces the ReRAM set/reset time by 71 % compared with the conventional boost converter. Besides the boost converter with proposed scheme improves 6.6 % energy efficiency compared with the boost converter with fixed 8 µA large ICMP. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | Resistive RAM(ReRAM) / boost converter / Internet of Things(IoT) / IoT edge device |
Paper # | CPM2016-89,ICD2016-50,IE2016-84 |
Date of Issue | 2016-11-22 (CPM, ICD, IE) |
Conference Information | |
Committee | VLD / DC / CPSY / RECONF / CPM / ICD / IE |
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Conference Date | 2016/11/28(3days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | Ritsumeikan University, Osaka Ibaraki Campus |
Topics (in Japanese) | (See Japanese page) |
Topics (in English) | Design Gaia 2016 -New Field of VLSI Design- |
Chair | Takashi Takenana(NEC) / Michiko Inoue(NAIST) / Yasuhiko Nakashima(NAIST) / Minoru Watanabe(Shizuoka Univ.) / Satoru Noge(Numazu National College of Tech.) / Minoru Fujishima(Hiroshima Univ.) / Seishi Takamura(NTT) |
Vice Chair | Hiroyuki Ochi(Ritsumeikan Univ.) / Satoshi Fukumoto(Tokyo Metropolitan Univ.) / Koji Nakano(Hiroshima Univ.) / Hidetsugu Irie(Univ. of Tokyo) / Masato Motomura(Hokkaido Univ.) / Yuichiro Shibata(Nagasaki Univ.) / Fumihiko Hirose(Yamagata Univ.) / Hideto Hidaka(Renesas) / Takayuki Hamamoto(Tokyo Univ. of Science) / Atsuro Ichigaya(NHK) |
Secretary | Hiroyuki Ochi(Fujitsu Labs.) / Satoshi Fukumoto(Hiroshima City Univ.) / Koji Nakano(Kyoto Sangyo Univ.) / Hidetsugu Irie(Tokyo Inst. of Tech.) / Masato Motomura(Fujitsu Labs.) / Yuichiro Shibata(NII) / Fumihiko Hirose(Univ. of Tsukuba) / Hideto Hidaka(Hiroshima City Univ.) / Takayuki Hamamoto(NTT) / Atsuro Ichigaya(Nihon Univ.) |
Assistant | Parizy Matthieu(Fujitsu Labs.) / / Takeshi Ohkawa(Utsunomiya Univ.) / Shinya Takameda(NAIST) / Takefumi Miyoshi(e-trees.Japan) / Yuuki Kobayashi(NEC) / Takashi Sakamoto(NTT) / Yuichi Nakamura(Toyohashi Univ. of Tech.) / Takashi Hashimoto(Panasonic) / Masanori Natsui(Tohoku Univ.) / Hiroyuki Ito(Tokyo Inst. of Tech.) / Pham Konkuha(Univ. of Electro-Comm.) / Kei Kawamura(KDDI R&D Labs.) / Keita Takahashi(Nagoya Univ.) |
Paper Information | |
Registration To | Technical Committee on VLSI Design Technologies / Technical Committee on Dependable Computing / Technical Committee on Computer Systems / Technical Committee on Reconfigurable Systems / Technical Committee on Component Parts and Materials / Technical Committee on Integrated Circuits and Devices / Technical Committee on Image Engineering |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | ReRAM Write Voltage Generator with Low Supply Voltage Operation and Optimized Comparator Bias-Current Scheme for IoT Edge Device |
Sub Title (in English) | |
Keyword(1) | Resistive RAM(ReRAM) |
Keyword(2) | boost converter |
Keyword(3) | Internet of Things(IoT) |
Keyword(4) | IoT edge device |
1st Author's Name | Kota Tsurumi |
1st Author's Affiliation | Chuo University(Chuo Univ.) |
2nd Author's Name | Masahiro Tanaka |
2nd Author's Affiliation | Chuo University(Chuo Univ.) |
3rd Author's Name | Ken Takeuchi |
3rd Author's Affiliation | Chuo University(Chuo Univ.) |
Date | 2016-11-30 |
Paper # | CPM2016-89,ICD2016-50,IE2016-84 |
Volume (vol) | vol.116 |
Number (no) | CPM-333,ICD-334,IE-335 |
Page | pp.pp.69-74(CPM), pp.69-74(ICD), pp.69-74(IE), |
#Pages | 6 |
Date of Issue | 2016-11-22 (CPM, ICD, IE) |