Presentation 2016-11-29
Measurement of Vth Variation due to STI Stress and Inverse Narrow Channel Effect at Ultra-Low Voltage in a Variability-Suppressed Process
Yasuhiro Ogasahara, Hanpei Koike,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) This paper demonstrates notable impact of Vth shift due to STI-induced dopant redistribution on ultra-low voltage designs. 2.5X Ion change at ultra-low voltages due to STI was measured on a 65nm SOTB CMOS process. Serious 6X Ion change due to inverse narrow channel effects was also observed. We propose ring oscillator based measurement procedure observing Vth shift by exploiting flexible Vth controllability by backgate biasing of SOTB process.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) FD-SOI / SOTB / process variability / STI stress effect / inverese narrow channel effect / ultra-low voltage circuits
Paper # CPM2016-76,ICD2016-37,IE2016-71
Date of Issue 2016-11-22 (CPM, ICD, IE)

Conference Information
Committee VLD / DC / CPSY / RECONF / CPM / ICD / IE
Conference Date 2016/11/28(3days)
Place (in Japanese) (See Japanese page)
Place (in English) Ritsumeikan University, Osaka Ibaraki Campus
Topics (in Japanese) (See Japanese page)
Topics (in English) Design Gaia 2016 -New Field of VLSI Design-
Chair Takashi Takenana(NEC) / Michiko Inoue(NAIST) / Yasuhiko Nakashima(NAIST) / Minoru Watanabe(Shizuoka Univ.) / Satoru Noge(Numazu National College of Tech.) / Minoru Fujishima(Hiroshima Univ.) / Seishi Takamura(NTT)
Vice Chair Hiroyuki Ochi(Ritsumeikan Univ.) / Satoshi Fukumoto(Tokyo Metropolitan Univ.) / Koji Nakano(Hiroshima Univ.) / Hidetsugu Irie(Univ. of Tokyo) / Masato Motomura(Hokkaido Univ.) / Yuichiro Shibata(Nagasaki Univ.) / Fumihiko Hirose(Yamagata Univ.) / Hideto Hidaka(Renesas) / Takayuki Hamamoto(Tokyo Univ. of Science) / Atsuro Ichigaya(NHK)
Secretary Hiroyuki Ochi(Fujitsu Labs.) / Satoshi Fukumoto(Hiroshima City Univ.) / Koji Nakano(Kyoto Sangyo Univ.) / Hidetsugu Irie(Tokyo Inst. of Tech.) / Masato Motomura(Fujitsu Labs.) / Yuichiro Shibata(NII) / Fumihiko Hirose(Univ. of Tsukuba) / Hideto Hidaka(Hiroshima City Univ.) / Takayuki Hamamoto(NTT) / Atsuro Ichigaya(Nihon Univ.)
Assistant Parizy Matthieu(Fujitsu Labs.) / / Takeshi Ohkawa(Utsunomiya Univ.) / Shinya Takameda(NAIST) / Takefumi Miyoshi(e-trees.Japan) / Yuuki Kobayashi(NEC) / Takashi Sakamoto(NTT) / Yuichi Nakamura(Toyohashi Univ. of Tech.) / Takashi Hashimoto(Panasonic) / Masanori Natsui(Tohoku Univ.) / Hiroyuki Ito(Tokyo Inst. of Tech.) / Pham Konkuha(Univ. of Electro-Comm.) / Kei Kawamura(KDDI R&D Labs.) / Keita Takahashi(Nagoya Univ.)

Paper Information
Registration To Technical Committee on VLSI Design Technologies / Technical Committee on Dependable Computing / Technical Committee on Computer Systems / Technical Committee on Reconfigurable Systems / Technical Committee on Component Parts and Materials / Technical Committee on Integrated Circuits and Devices / Technical Committee on Image Engineering
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Measurement of Vth Variation due to STI Stress and Inverse Narrow Channel Effect at Ultra-Low Voltage in a Variability-Suppressed Process
Sub Title (in English)
Keyword(1) FD-SOI
Keyword(2) SOTB
Keyword(3) process variability
Keyword(4) STI stress effect
Keyword(5) inverese narrow channel effect
Keyword(6) ultra-low voltage circuits
1st Author's Name Yasuhiro Ogasahara
1st Author's Affiliation National Institute of Advanced Industrial Science and Technology(AIST)
2nd Author's Name Hanpei Koike
2nd Author's Affiliation National Institute of Advanced Industrial Science and Technology(AIST)
Date 2016-11-29
Paper # CPM2016-76,ICD2016-37,IE2016-71
Volume (vol) vol.116
Number (no) CPM-333,ICD-334,IE-335
Page pp.pp.1-6(CPM), pp.1-6(ICD), pp.1-6(IE),
#Pages 6
Date of Issue 2016-11-22 (CPM, ICD, IE)