Presentation | 2016-11-28 Evaluation of Soft Error Hardness of FinFET and FDSOI Processes by the PHITS-TCAD Simulation System Shigehiro Umehara, Jun Furuta, Kazutoshi Kobayashi, |
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PDF Download Page | PDF download Page Link |
Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | The impact of soft errors has been serious with process scaling of integrated circuits. Simulation methods for soft errors in FDSOI and FinFET are indispensable. We alalyze the soft error tolerance in 28-nm FDSOI and 22-nm FinFET processes by the PHIT-TCAD simulation system. It consists of two parts, a particle transport simulation by PHITS (Particle and Heavy Ion Transport code System) and device simulations. We investigate the soft error rates on 28-nm FDSOI and 22-nm FinFET by the PHITS-TCAD simulation. The soft error tolerance in 22-nm FinFET is 10 times or more stronger than that in 28-nm FDSOI in supply voltages from 1V to 0.4V. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | Soft Error / FDSOI / FinFET / TCAD / PHITS |
Paper # | VLD2016-50,DC2016-44 |
Date of Issue | 2016-11-21 (VLD, DC) |
Conference Information | |
Committee | VLD / DC / CPSY / RECONF / CPM / ICD / IE |
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Conference Date | 2016/11/28(3days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | Ritsumeikan University, Osaka Ibaraki Campus |
Topics (in Japanese) | (See Japanese page) |
Topics (in English) | Design Gaia 2016 -New Field of VLSI Design- |
Chair | Takashi Takenana(NEC) / Michiko Inoue(NAIST) / Yasuhiko Nakashima(NAIST) / Minoru Watanabe(Shizuoka Univ.) / Satoru Noge(Numazu National College of Tech.) / Minoru Fujishima(Hiroshima Univ.) / Seishi Takamura(NTT) |
Vice Chair | Hiroyuki Ochi(Ritsumeikan Univ.) / Satoshi Fukumoto(Tokyo Metropolitan Univ.) / Koji Nakano(Hiroshima Univ.) / Hidetsugu Irie(Univ. of Tokyo) / Masato Motomura(Hokkaido Univ.) / Yuichiro Shibata(Nagasaki Univ.) / Fumihiko Hirose(Yamagata Univ.) / Hideto Hidaka(Renesas) / Takayuki Hamamoto(Tokyo Univ. of Science) / Atsuro Ichigaya(NHK) |
Secretary | Hiroyuki Ochi(Fujitsu Labs.) / Satoshi Fukumoto(Hiroshima City Univ.) / Koji Nakano(Kyoto Sangyo Univ.) / Hidetsugu Irie(Tokyo Inst. of Tech.) / Masato Motomura(Fujitsu Labs.) / Yuichiro Shibata(NII) / Fumihiko Hirose(Univ. of Tsukuba) / Hideto Hidaka(Hiroshima City Univ.) / Takayuki Hamamoto(NTT) / Atsuro Ichigaya(Nihon Univ.) |
Assistant | Parizy Matthieu(Fujitsu Labs.) / / Takeshi Ohkawa(Utsunomiya Univ.) / Shinya Takameda(NAIST) / Takefumi Miyoshi(e-trees.Japan) / Yuuki Kobayashi(NEC) / Takashi Sakamoto(NTT) / Yuichi Nakamura(Toyohashi Univ. of Tech.) / Takashi Hashimoto(Panasonic) / Masanori Natsui(Tohoku Univ.) / Hiroyuki Ito(Tokyo Inst. of Tech.) / Pham Konkuha(Univ. of Electro-Comm.) / Kei Kawamura(KDDI R&D Labs.) / Keita Takahashi(Nagoya Univ.) |
Paper Information | |
Registration To | Technical Committee on VLSI Design Technologies / Technical Committee on Dependable Computing / Technical Committee on Computer Systems / Technical Committee on Reconfigurable Systems / Technical Committee on Component Parts and Materials / Technical Committee on Integrated Circuits and Devices / Technical Committee on Image Engineering |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Evaluation of Soft Error Hardness of FinFET and FDSOI Processes by the PHITS-TCAD Simulation System |
Sub Title (in English) | |
Keyword(1) | Soft Error |
Keyword(2) | FDSOI |
Keyword(3) | FinFET |
Keyword(4) | TCAD |
Keyword(5) | PHITS |
1st Author's Name | Shigehiro Umehara |
1st Author's Affiliation | Kyoto Institute of Technology(KIT) |
2nd Author's Name | Jun Furuta |
2nd Author's Affiliation | Kyoto Institute of Technology(KIT) |
3rd Author's Name | Kazutoshi Kobayashi |
3rd Author's Affiliation | Kyoto Institute of Technology(KIT) |
Date | 2016-11-28 |
Paper # | VLD2016-50,DC2016-44 |
Volume (vol) | vol.116 |
Number (no) | VLD-330,DC-331 |
Page | pp.pp.37-41(VLD), pp.37-41(DC), |
#Pages | 5 |
Date of Issue | 2016-11-21 (VLD, DC) |