Presentation 2016-11-28
Evaluation of Radiation-Hard Circuit Structures in a FDSOI Process by TCAD Simulations
Kodai Yamada, Haruki Maruoka, Shigehiro Umehara, Jun Furuta, Kazutoshi Kobayashi,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) According to the Moore's law, LSIs are miniaturized and the reliability of LSIs is degraded. To improve the tolerance ofFFs against soft errors, several redundant FFs are effective countermeasures. However, redundant FFs have large area, delay and power overheads. Non-redundant FF structures with higher soft-error resilience are needed. In this paper, we evaluate non-redundant FF structures in an FDSOI process to prevent soft errors. We evaluate soft error rates of latches with additional components such as capacitors or PMOS pass-transistors by TCAD simulations. Even by a particle hit with LET of 60 mev, the stored value of the latch with PMOS pass-transistors is not upset. Thus, the latch has enough tolerance to use even if in outer space.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Soft error / TCAD simulations / FDSOI / Radiation-hardened latch / Pass-transistor
Paper # VLD2016-49,DC2016-43
Date of Issue 2016-11-21 (VLD, DC)

Conference Information
Committee VLD / DC / CPSY / RECONF / CPM / ICD / IE
Conference Date 2016/11/28(3days)
Place (in Japanese) (See Japanese page)
Place (in English) Ritsumeikan University, Osaka Ibaraki Campus
Topics (in Japanese) (See Japanese page)
Topics (in English) Design Gaia 2016 -New Field of VLSI Design-
Chair Takashi Takenana(NEC) / Michiko Inoue(NAIST) / Yasuhiko Nakashima(NAIST) / Minoru Watanabe(Shizuoka Univ.) / Satoru Noge(Numazu National College of Tech.) / Minoru Fujishima(Hiroshima Univ.) / Seishi Takamura(NTT)
Vice Chair Hiroyuki Ochi(Ritsumeikan Univ.) / Satoshi Fukumoto(Tokyo Metropolitan Univ.) / Koji Nakano(Hiroshima Univ.) / Hidetsugu Irie(Univ. of Tokyo) / Masato Motomura(Hokkaido Univ.) / Yuichiro Shibata(Nagasaki Univ.) / Fumihiko Hirose(Yamagata Univ.) / Hideto Hidaka(Renesas) / Takayuki Hamamoto(Tokyo Univ. of Science) / Atsuro Ichigaya(NHK)
Secretary Hiroyuki Ochi(Fujitsu Labs.) / Satoshi Fukumoto(Hiroshima City Univ.) / Koji Nakano(Kyoto Sangyo Univ.) / Hidetsugu Irie(Tokyo Inst. of Tech.) / Masato Motomura(Fujitsu Labs.) / Yuichiro Shibata(NII) / Fumihiko Hirose(Univ. of Tsukuba) / Hideto Hidaka(Hiroshima City Univ.) / Takayuki Hamamoto(NTT) / Atsuro Ichigaya(Nihon Univ.)
Assistant Parizy Matthieu(Fujitsu Labs.) / / Takeshi Ohkawa(Utsunomiya Univ.) / Shinya Takameda(NAIST) / Takefumi Miyoshi(e-trees.Japan) / Yuuki Kobayashi(NEC) / Takashi Sakamoto(NTT) / Yuichi Nakamura(Toyohashi Univ. of Tech.) / Takashi Hashimoto(Panasonic) / Masanori Natsui(Tohoku Univ.) / Hiroyuki Ito(Tokyo Inst. of Tech.) / Pham Konkuha(Univ. of Electro-Comm.) / Kei Kawamura(KDDI R&D Labs.) / Keita Takahashi(Nagoya Univ.)

Paper Information
Registration To Technical Committee on VLSI Design Technologies / Technical Committee on Dependable Computing / Technical Committee on Computer Systems / Technical Committee on Reconfigurable Systems / Technical Committee on Component Parts and Materials / Technical Committee on Integrated Circuits and Devices / Technical Committee on Image Engineering
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Evaluation of Radiation-Hard Circuit Structures in a FDSOI Process by TCAD Simulations
Sub Title (in English)
Keyword(1) Soft error
Keyword(2) TCAD simulations
Keyword(3) FDSOI
Keyword(4) Radiation-hardened latch
Keyword(5) Pass-transistor
1st Author's Name Kodai Yamada
1st Author's Affiliation Kyoto Institute of Technology(KIT)
2nd Author's Name Haruki Maruoka
2nd Author's Affiliation Kyoto Institute of Technology(KIT)
3rd Author's Name Shigehiro Umehara
3rd Author's Affiliation Kyoto Institute of Technology(KIT)
4th Author's Name Jun Furuta
4th Author's Affiliation Kyoto Institute of Technology(KIT)
5th Author's Name Kazutoshi Kobayashi
5th Author's Affiliation Kyoto Institute of Technology(KIT)
Date 2016-11-28
Paper # VLD2016-49,DC2016-43
Volume (vol) vol.116
Number (no) VLD-330,DC-331
Page pp.pp.31-36(VLD), pp.31-36(DC),
#Pages 6
Date of Issue 2016-11-21 (VLD, DC)