| Presentation | 2016-11-17 Semi-Physical Large Signal Model of GaN HEMTs on Si considering temperature dependence of RF leakage current in Substrates Yutaro Yamaguchi, Shintaro Shinjo, Koji Yamanaka, Toshiyuki Oishi, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | In this paper, semi-physical large signal model of GaN HEMTs on Si (GaN-on-Si) considering temperature dependence of RF leakage current in Substrates is proposed. In the proposed model, the electron and hole near the interface between the buffer layer and the Si substrate is taken into account. The electron is in the inversion layer at the interface between buffer layer and Si substrate and the hole is in the acceptor region generated by the atomic diffusion from buffer layer to Si substrate. The extrinsic leak path circuit (C-R-C circuit) corresponding the physical structure of GaN-on-Si is newly added between drain and source of a common equivalent circuit of GaN HEMTs to consider the degradation of efficiency due to the extrinsic RF leakage current of the electron and hole in Si substrate. Moreover, the resistance and capacitance in the extrinsic leak path circuit are derived from physical equation of the electron and hole concentration in Si substrate to physically consider temperature and bias dependence of RF leakage current. As a result of verification of the proposed model, the model agrees with measurement data with regard to temperature dependence of large signal characteristics and the dependence of drain electrode width, and availability of the proposed model was confirmed. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | GaN HEMT / Si substrate / Large signal model / temperature dependence / RF leakage current |
| Paper # | MW2016-122 |
| Date of Issue | 2016-11-10 (MW) |
| Conference Information | |
| Committee | MW |
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| Conference Date | 2016/11/17(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Saga Univ. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Microwave Technologies |
| Chair | Yohei Ishikawa(Kyoto Univ.) |
| Vice Chair | Takao Kuki(Kokushikan Univ.) / Kenjiro Nishikawa(Kagoshima Univ.) / Kenichi Tajima(Mitsubishi Electric) |
| Secretary | Takao Kuki(Panasonic) / Kenjiro Nishikawa(Tokyo Inst. of Tech.) / Kenichi Tajima |
| Assistant | Naoto Sekiya(Univ. of Yamanashi) / Satoshi Ono(Univ. of Electro-Comm.) |
| Paper Information | |
| Registration To | Technical Committee on Microwaves |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Semi-Physical Large Signal Model of GaN HEMTs on Si considering temperature dependence of RF leakage current in Substrates |
| Sub Title (in English) | |
| Keyword(1) | GaN HEMT |
| Keyword(2) | Si substrate |
| Keyword(3) | Large signal model |
| Keyword(4) | temperature dependence |
| Keyword(5) | RF leakage current |
| 1st Author's Name | Yutaro Yamaguchi |
| 1st Author's Affiliation | Mitsubishi Electroc Corporation(Mitsubishi Electric Corp.) |
| 2nd Author's Name | Shintaro Shinjo |
| 2nd Author's Affiliation | Mitsubishi Electroc Corporation(Mitsubishi Electric Corp.) |
| 3rd Author's Name | Koji Yamanaka |
| 3rd Author's Affiliation | Mitsubishi Electroc Corporation(Mitsubishi Electric Corp.) |
| 4th Author's Name | Toshiyuki Oishi |
| 4th Author's Affiliation | Saga University(Saga Univ.) |
| Date | 2016-11-17 |
| Paper # | MW2016-122 |
| Volume (vol) | vol.116 |
| Number (no) | MW-310 |
| Page | pp.pp.33-38(MW), |
| #Pages | 6 |
| Date of Issue | 2016-11-10 (MW) |