Presentation 2016-10-28
[Invited Talk] Device Simulation Analysis of Contact Modification in Organic Thin-Film Transistors
Kei Noda, Haruki Nagahama, Ryo Yamamoto, Yasuo Wada, Toru Toyabe,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) Device fabrication and simulation analysis of organic thin-film transistors, which especially focused on contact doping and chemical modification of the electrode surfaces, were performed. The analysis results for contact-doped pentacene thin-film transistors with bottom-gate, top-contact configuration indicate the improved carrier injection due to the reduction of the thickness of the tunneling barrier at the source/semiconductor interface. Additionally, for bottom-gate, bottom-contact pentacene transistors with gold source-drain electrodes treated with pentafluorobenzenethiol, both the decrease in the carrier injection barrier and the improvement of the film structure at the electrode/semiconductor interface should be considered for discussing and understanding the effects of the contact modification in detail.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Organic Thin-Film Transistor / Contact Modification / Device Simulation / Schottky Barrier
Paper # OME2016-38
Date of Issue 2016-10-21 (OME)

Conference Information
Committee OME
Conference Date 2016/10/28(1days)
Place (in Japanese) (See Japanese page)
Place (in English) Kikai-Shinko-Kaikan Bldg.
Topics (in Japanese) (See Japanese page)
Topics (in English) Organic device, Materials, General
Chair Naoki Matsuda(AIST)
Vice Chair Tatsuo Mori(Aichi Inst. of Tech.)
Secretary Tatsuo Mori(NTT)
Assistant Hirotake Kajii(Osaka Univ.) / Dai Taguchi(Tokyo Inst. of Tech.)

Paper Information
Registration To Technical Committee on Organic Molecular Electronics
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) [Invited Talk] Device Simulation Analysis of Contact Modification in Organic Thin-Film Transistors
Sub Title (in English)
Keyword(1) Organic Thin-Film Transistor
Keyword(2) Contact Modification
Keyword(3) Device Simulation
Keyword(4) Schottky Barrier
1st Author's Name Kei Noda
1st Author's Affiliation Keio University(Keio Univ.)
2nd Author's Name Haruki Nagahama
2nd Author's Affiliation Keio University(Keio Univ.)
3rd Author's Name Ryo Yamamoto
3rd Author's Affiliation Keio University(Keio Univ.)
4th Author's Name Yasuo Wada
4th Author's Affiliation Keio University(Keio Univ.)
5th Author's Name Toru Toyabe
5th Author's Affiliation Toyo Universiry(Toyo Univ.)
Date 2016-10-28
Paper # OME2016-38
Volume (vol) vol.116
Number (no) OME-281
Page pp.pp.1-4(OME),
#Pages 4
Date of Issue 2016-10-21 (OME)