| Presentation | 2016-10-28 [Invited Talk] Device Simulation Analysis of Contact Modification in Organic Thin-Film Transistors Kei Noda, Haruki Nagahama, Ryo Yamamoto, Yasuo Wada, Toru Toyabe, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Device fabrication and simulation analysis of organic thin-film transistors, which especially focused on contact doping and chemical modification of the electrode surfaces, were performed. The analysis results for contact-doped pentacene thin-film transistors with bottom-gate, top-contact configuration indicate the improved carrier injection due to the reduction of the thickness of the tunneling barrier at the source/semiconductor interface. Additionally, for bottom-gate, bottom-contact pentacene transistors with gold source-drain electrodes treated with pentafluorobenzenethiol, both the decrease in the carrier injection barrier and the improvement of the film structure at the electrode/semiconductor interface should be considered for discussing and understanding the effects of the contact modification in detail. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Organic Thin-Film Transistor / Contact Modification / Device Simulation / Schottky Barrier |
| Paper # | OME2016-38 |
| Date of Issue | 2016-10-21 (OME) |
| Conference Information | |
| Committee | OME |
|---|---|
| Conference Date | 2016/10/28(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Kikai-Shinko-Kaikan Bldg. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Organic device, Materials, General |
| Chair | Naoki Matsuda(AIST) |
| Vice Chair | Tatsuo Mori(Aichi Inst. of Tech.) |
| Secretary | Tatsuo Mori(NTT) |
| Assistant | Hirotake Kajii(Osaka Univ.) / Dai Taguchi(Tokyo Inst. of Tech.) |
| Paper Information | |
| Registration To | Technical Committee on Organic Molecular Electronics |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | [Invited Talk] Device Simulation Analysis of Contact Modification in Organic Thin-Film Transistors |
| Sub Title (in English) | |
| Keyword(1) | Organic Thin-Film Transistor |
| Keyword(2) | Contact Modification |
| Keyword(3) | Device Simulation |
| Keyword(4) | Schottky Barrier |
| 1st Author's Name | Kei Noda |
| 1st Author's Affiliation | Keio University(Keio Univ.) |
| 2nd Author's Name | Haruki Nagahama |
| 2nd Author's Affiliation | Keio University(Keio Univ.) |
| 3rd Author's Name | Ryo Yamamoto |
| 3rd Author's Affiliation | Keio University(Keio Univ.) |
| 4th Author's Name | Yasuo Wada |
| 4th Author's Affiliation | Keio University(Keio Univ.) |
| 5th Author's Name | Toru Toyabe |
| 5th Author's Affiliation | Toyo Universiry(Toyo Univ.) |
| Date | 2016-10-28 |
| Paper # | OME2016-38 |
| Volume (vol) | vol.116 |
| Number (no) | OME-281 |
| Page | pp.pp.1-4(OME), |
| #Pages | 4 |
| Date of Issue | 2016-10-21 (OME) |