Presentation 2016-10-20
C-Band GaN Diode Rectifier for HySIC MPT System
Satoshi Yoshida, Akihira Miyachi, Ryoko Kishikawa, Masahiro Horibe, Kenjiro Nishikawa, Shigeo Kawasaki,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) In this paper, we evaluate a 5.8 GHz rectifier using GaN diode for space solar power system application. As a first step, a single diode was measured and modeled by fitting. Finally, a 5.8 GHz high power rectifier wasdesigned and fabricated using RO4350 substrate. Measured RF–DC conversion efficiency and output DC power at5.9 GHz (40 dBm) are 32.6% and 3042mW, respectively. This report makes a first step for future miniaturization bythe hybrid semiconductor integrated circuit (HySIC) technology which utilizes different type semiconductor devices.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Wireless Power Transmission / space solar power system / hybrid semiconductor integrated circuit
Paper # EMCJ2016-69,MW2016-101,EST2016-65
Date of Issue 2016-10-13 (EMCJ, MW, EST)

Conference Information
Committee EMCJ / IEE-EMC / MW / EST
Conference Date 2016/10/20(2days)
Place (in Japanese) (See Japanese page)
Place (in English) Tohoku Univ.
Topics (in Japanese) (See Japanese page)
Topics (in English) Microwave, Electromagnetic simulation, EMC, etc.
Chair Hideaki Sone(Tohoku Univ.) / Ken Kawamata(Tohoku-gakuin Univ.) / Yohei Ishikawa(Kyoto Univ.) / Hideaki Kimura(NTT)
Vice Chair Osami Wada(Kyoto Univ.) / / Takao Kuki(Kokushikan Univ.) / Kenjiro Nishikawa(Kagoshima Univ.) / Kenichi Tajima(Mitsubishi Electric) / Shinichiro Ohnuki(Nihon Univ.) / Akimasa Hirata(Nagoya Inst. of Tech.)
Secretary Osami Wada(AIST) / (Hitachi Automotive Systems) / Takao Kuki(Osaka Univ.) / Kenjiro Nishikawa(NMRI) / Kenichi Tajima(Panasonic) / Shinichiro Ohnuki(Tokyo Inst. of Tech.) / Akimasa Hirata(Muroran Inst. of Tech.)
Assistant Yoshiki Kayano(Univ. of Electro-Comm.) / Yusaku Katsube(Hitachi) / Chie Sasaki(Panasonic) / Yu-ichi Hayashi(Tohoku-gakuin Univ.) / Naoto Sekiya(Univ. of Yamanashi) / Satoshi Ono(Univ. of Electro-Comm.) / Atsushi Kezuka(ENRI) / Kenji Taguchi(Kitami Inst. of Tech.)

Paper Information
Registration To Technical Committee on Electromagnetic Compatibility / Technical Meeting on Electromagnetic Compatibility / Technical Committee on Microwaves / Technical Committee on Electronics Simulation Technology
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) C-Band GaN Diode Rectifier for HySIC MPT System
Sub Title (in English)
Keyword(1) Wireless Power Transmission
Keyword(2) space solar power system
Keyword(3) hybrid semiconductor integrated circuit
1st Author's Name Satoshi Yoshida
1st Author's Affiliation Kagoshima University(Kagoshima Univ.)
2nd Author's Name Akihira Miyachi
2nd Author's Affiliation JAXA(JAXA)
3rd Author's Name Ryoko Kishikawa
3rd Author's Affiliation AIST(AIST)
4th Author's Name Masahiro Horibe
4th Author's Affiliation AIST(AIST)
5th Author's Name Kenjiro Nishikawa
5th Author's Affiliation Kagoshima University(Kagoshima Univ.)
6th Author's Name Shigeo Kawasaki
6th Author's Affiliation JAXA(JAXA)
Date 2016-10-20
Paper # EMCJ2016-69,MW2016-101,EST2016-65
Volume (vol) vol.116
Number (no) EMCJ-253,MW-254,EST-255
Page pp.pp.53-56(EMCJ), pp.53-56(MW), pp.53-56(EST),
#Pages 4
Date of Issue 2016-10-13 (EMCJ, MW, EST)