Presentation 2016-10-20
Resistive switching in planar metal/NiO bilayer system with low voltage operation
Yosuke Nakano, Kyota Okabe, Takashi Kimura,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) Development of nano-scale non-volatile memory is responsible for corresponding to increasing of amount of information due to the growing availability of information society. In this study, we have developed novel memory device consisting of amorphous-metal/NiO bilayer structure. In this device, resistive switching is controlled by applying bias voltage. This device have many advantages, such as non-volatile characteristic, low operation voltage, fast response speed. We will show the detailed results about the device characterization and explain the proposed switching mechanism.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) non-volatile memory / amorphous metal / magnetic oxide
Paper #
Date of Issue

Conference Information
Committee MR / ITE-MMS
Conference Date 2016/10/20(2days)
Place (in Japanese) (See Japanese page)
Place (in English) Nishijin Plaza
Topics (in Japanese) (See Japanese page)
Topics (in English) Magnetic head, Spintronics, etc.
Chair Yoshihiro Okamoto(Ehime Univ.) / Eiichi Miyashita(NHK)
Vice Chair
Secretary (Kogakuin Univ.) / (AIST)
Assistant Kiwamu Kudo(Toshiba) / Shuhei Yoshida(Kinki Univ.)

Paper Information
Registration To Technical Committee on Magnetic Recording / Technical Group on Multi-media Storage
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Resistive switching in planar metal/NiO bilayer system with low voltage operation
Sub Title (in English)
Keyword(1) non-volatile memory
Keyword(2) amorphous metal
Keyword(3) magnetic oxide
1st Author's Name Yosuke Nakano
1st Author's Affiliation Kyushu University(Kyushu Univ.)
2nd Author's Name Kyota Okabe
2nd Author's Affiliation Kyushu University(Kyushu Univ.)
3rd Author's Name Takashi Kimura
3rd Author's Affiliation Kyushu University(Kyushu Univ.)
Date 2016-10-20
Paper #
Volume (vol) vol.116
Number (no) MR-258
Page pp.pp.-(),
#Pages
Date of Issue