Presentation 2016-09-16
A current distribution measurement with magnetic near field intensity for designing wiring pattern in a SiC power module
Eisuke Masuda, Takaaki Ibuchi, Tsuyoshi Funaki, Hirotaka Otake, Tatsuya Miyazaki, Yasuo Kanetake, Takashi Nakamura,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) Fast switching operation of wide-bandgap power semiconductor devices is expected to reduce the switching losses in a power converter. However, large di/dt and dv/dt also lead to EMI(Electro-Magnetic Interference) noise by interacting with circuit parasitic component. This report studies extraction of interconnect parasitic inductance in a SiC power module using Partial Element Equivalent Circuit method, and identifies the model validation with magnetic near-field intensity measurement for PCB(Printed-Circuit Board). This report also discusses the current distribution on a PCB based on magnetic near-field intensity measurement to study the optimized wiring pattern design of SiC power module.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) SiC power module / parasitic inductance / Partial Element Equivalent Circuit method / magnetic intensity / current distribution
Paper # EMCJ2016-50
Date of Issue 2016-09-09 (EMCJ)

Conference Information
Committee EMCJ
Conference Date 2016/9/16(1days)
Place (in Japanese) (See Japanese page)
Place (in English) University of Hyogo
Topics (in Japanese) (See Japanese page)
Topics (in English) Absorber, Shield, EMC
Chair Hideaki Sone(Tohoku Univ.)
Vice Chair Osami Wada(Kyoto Univ.)
Secretary Osami Wada(AIST)
Assistant Yoshiki Kayano(Univ. of Electro-Comm.) / Yusaku Katsube(Hitachi) / Chie Sasaki(Panasonic)

Paper Information
Registration To Technical Committee on Electromagnetic Compatibility
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) A current distribution measurement with magnetic near field intensity for designing wiring pattern in a SiC power module
Sub Title (in English)
Keyword(1) SiC power module
Keyword(2) parasitic inductance
Keyword(3) Partial Element Equivalent Circuit method
Keyword(4) magnetic intensity
Keyword(5) current distribution
1st Author's Name Eisuke Masuda
1st Author's Affiliation Osaka University(Osaka Univ.)
2nd Author's Name Takaaki Ibuchi
2nd Author's Affiliation Osaka University(Osaka Univ.)
3rd Author's Name Tsuyoshi Funaki
3rd Author's Affiliation Osaka University(Osaka Univ.)
4th Author's Name Hirotaka Otake
4th Author's Affiliation ROHM Co., Ltd.(ROHM)
5th Author's Name Tatsuya Miyazaki
5th Author's Affiliation ROHM Co., Ltd.(ROHM)
6th Author's Name Yasuo Kanetake
6th Author's Affiliation ROHM Co., Ltd.(ROHM)
7th Author's Name Takashi Nakamura
7th Author's Affiliation ROHM Co., Ltd.(ROHM)
Date 2016-09-16
Paper # EMCJ2016-50
Volume (vol) vol.116
Number (no) EMCJ-223
Page pp.pp.1-6(EMCJ),
#Pages 6
Date of Issue 2016-09-09 (EMCJ)