Presentation 2016-08-25
Continuous-wave Operation of Ultra-short Cavity Membrane Lasers on Si Substrates
Erina Kanno, Koji Takeda, Takuro Fujii, Koichi Hasebe, Hidetaka Nishi, Tsuyoshi Yamamoto, Takaaki Kakitsuka, Shinji Matsuo,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) It is required to reduce energy consumptions of directly modulated semiconductor lasers to realize very short distance optical interconnects. Chip to chip optical interconnects require lasers with their active length of 10~20 $myu$m. We have developed ultra-short cavity InP-based membrane lasers on SiO2/Si substrates, because these structures enable small energy consumptions due to the large optical confinement. By applying distributed Bragg reflector (DBR) structures, we successfully reduced the active length to 10 $myu$m. The DBR laser exhibited a threshold current of 0.17 mA. We also fabricated 20 $myu$m long $lambda$/4-shifted DFB lasers with DBR mirrors on the both sides (twin mirror DR laser). It exhibits a threshold current of 0.66 mA.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Semiconductor Laser / Wafer bonding / Silicon photonics / Short cavity laser / DBR laser / DR laser
Paper # R2016-19,EMD2016-23,CPM2016-32,OPE2016-53,LQE2016-28
Date of Issue 2016-08-18 (R, EMD, CPM, OPE, LQE)

Conference Information
Committee LQE / OPE / EMD / R / CPM
Conference Date 2016/8/25(2days)
Place (in Japanese) (See Japanese page)
Place (in English)
Topics (in Japanese) (See Japanese page)
Topics (in English)
Chair Susumu Noda(Kyoto Univ.) / Kensuke Ogawa(Fujikura) / Yoshiteru Abe(NTT) / Hiroyasu Mawatari(NTT) / Satoru Noge(Numazu National College of Tech.)
Vice Chair Tsuyoshi Yamamoto(Fujitsu Labs.) / Kazutoshi Kato(Kyushu Univ.) / / Tetsushi Yuge(National Defense Academy) / Fumihiko Hirose(Yamagata Univ.)
Secretary Tsuyoshi Yamamoto(NTT) / Kazutoshi Kato(Tohoku Univ.) / (Keio Univ.) / Tetsushi Yuge(Mitsubishi Electric) / Fumihiko Hirose(Sumitomo Denso)
Assistant / Atsushi Aratake(NTT) / Katsumi Nakatsuhara(Kanagawa Inst. of Tech.) / Yoshiki Kayano(Univ. of Electro-Comm.) / Yuichi Hayashi(Tohoku Gakuin Univ.) / Maratt Zanikef(Kyushu Inst. of Tech.) / Nobuyuki Tamura(Hosei Univ.) / Takashi Sakamoto(NTT) / Yuichi Nakamura(Toyohashi Univ. of Tech.)

Paper Information
Registration To Technical Committee on Lasers and Quantum Electronics / Technical Committee on Optoelectronics / Technical Committee on Electromechanical Devices / Technical Committee on Reliability / Technical Committee on Component Parts and Materials
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Continuous-wave Operation of Ultra-short Cavity Membrane Lasers on Si Substrates
Sub Title (in English)
Keyword(1) Semiconductor Laser
Keyword(2) Wafer bonding
Keyword(3) Silicon photonics
Keyword(4) Short cavity laser
Keyword(5) DBR laser
Keyword(6) DR laser
1st Author's Name Erina Kanno
1st Author's Affiliation Nippon Telegraph and Telephone Corporation(NTT)
2nd Author's Name Koji Takeda
2nd Author's Affiliation Nippon Telegraph and Telephone Corporation(NTT)
3rd Author's Name Takuro Fujii
3rd Author's Affiliation Nippon Telegraph and Telephone Corporation(NTT)
4th Author's Name Koichi Hasebe
4th Author's Affiliation Nippon Telegraph and Telephone Corporation(NTT)
5th Author's Name Hidetaka Nishi
5th Author's Affiliation Nippon Telegraph and Telephone Corporation(NTT)
6th Author's Name Tsuyoshi Yamamoto
6th Author's Affiliation Nippon Telegraph and Telephone Corporation(NTT)
7th Author's Name Takaaki Kakitsuka
7th Author's Affiliation Nippon Telegraph and Telephone Corporation(NTT)
8th Author's Name Shinji Matsuo
8th Author's Affiliation Nippon Telegraph and Telephone Corporation(NTT)
Date 2016-08-25
Paper # R2016-19,EMD2016-23,CPM2016-32,OPE2016-53,LQE2016-28
Volume (vol) vol.116
Number (no) R-191,EMD-192,CPM-193,OPE-194,LQE-195
Page pp.pp.1-4(R), pp.1-4(EMD), pp.1-4(CPM), pp.1-4(OPE), pp.1-4(LQE),
#Pages 4
Date of Issue 2016-08-18 (R, EMD, CPM, OPE, LQE)