Presentation 2016-08-01
[Invited Talk] Novel Pixel Structure with Stacked Deep Photodiode to Achieve High NIR Sensitivity and High MTF
Hiroki Takahashi, Hiroshi Tanaka, Masahiro Oda, Mitsuyoshi Ando, Naoto Niisoe, Shinichi Kawai, Takuya Asano, Mitsugu Yoshita, Tohru Yamada,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) Novel pixel structure with Stacked Deep Photodiode (SDP) has been newly developed for both high Near Infra-Red (NIR) sensitivity and high Modulation Transfer Function (MTF). SDP with 5.4µm pixel pitch has achieved Quantum Efficiency (QE) of 30% and MTF of 40% at Nyquist frequency at 850nm wavelength by stacking photodiode completely separated from neighboring pixels. Furthermore, Shifted SDP which can be optimized for oblique incident light has suppressed crosstalk as low as 1.5% at 25 º at 850 nm wavelength.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) NIR / MTF / Stack / Image sensor / Crosstalk
Paper # SDM2016-51,ICD2016-19
Date of Issue 2016-07-25 (SDM, ICD)

Conference Information
Committee ICD / SDM / ITE-IST
Conference Date 2016/8/1(3days)
Place (in Japanese) (See Japanese page)
Place (in English) Central Electric Club
Topics (in Japanese) (See Japanese page)
Topics (in English) Analog, Mixed Analog and Digital, RF, and Sensor Interface, Low voltage/low power techniques, novel devices, circuits, and applications
Chair Minoru Fujishima(Hiroshima Univ.) / Tatsuya Kunikiyo(Renesas) / Shigetoshi Sugawa(Tohoku Univ.)
Vice Chair Hideto Hidaka(Renesas) / Takahiro Shinada(Tohoku Univ.) / Takayuki Hamamoto(東京理科大) / Hiroshi Ohtake(NHK)
Secretary Hideto Hidaka(Hiroshima Univ.) / Takahiro Shinada(Univ. of Tokyo) / Takayuki Hamamoto(Tohoku Univ.) / Hiroshi Ohtake(Renesas)
Assistant Takashi Hashimoto(Panasonic) / Masanori Natsui(Tohoku Univ.) / Hiroyuki Ito(Tokyo Inst. of Tech.) / Pham Konkuha(Univ. of Electro-Comm.) / Hiroya Ikeda(Shizuoka Univ.)

Paper Information
Registration To Technical Committee on Integrated Circuits and Devices / Technical Committee on Silicon Device and Materials / Technical Group on Information Sensing Technologies
Language ENG-JTITLE
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) [Invited Talk] Novel Pixel Structure with Stacked Deep Photodiode to Achieve High NIR Sensitivity and High MTF
Sub Title (in English)
Keyword(1) NIR
Keyword(2) MTF
Keyword(3) Stack
Keyword(4) Image sensor
Keyword(5) Crosstalk
1st Author's Name Hiroki Takahashi
1st Author's Affiliation TowerJazz Panasonic Semiconductor Co., Ltd.(TPSCo)
2nd Author's Name Hiroshi Tanaka
2nd Author's Affiliation TowerJazz Panasonic Semiconductor Co., Ltd.(TPSCo)
3rd Author's Name Masahiro Oda
3rd Author's Affiliation TowerJazz Panasonic Semiconductor Co., Ltd.(TPSCo)
4th Author's Name Mitsuyoshi Ando
4th Author's Affiliation TowerJazz Panasonic Semiconductor Co., Ltd.(TPSCo)
5th Author's Name Naoto Niisoe
5th Author's Affiliation TowerJazz Panasonic Semiconductor Co., Ltd.(TPSCo)
6th Author's Name Shinichi Kawai
6th Author's Affiliation Panasonic Semiconductor Solutions Co., Ltd.(PSCS)
7th Author's Name Takuya Asano
7th Author's Affiliation Panasonic Semiconductor Solutions Co., Ltd.(PSCS)
8th Author's Name Mitsugu Yoshita
8th Author's Affiliation Panasonic Semiconductor Solutions Co., Ltd.(PSCS)
9th Author's Name Tohru Yamada
9th Author's Affiliation Panasonic Semiconductor Solutions Co., Ltd.(PSCS)
Date 2016-08-01
Paper # SDM2016-51,ICD2016-19
Volume (vol) vol.116
Number (no) SDM-172,ICD-173
Page pp.pp.41-44(SDM), pp.41-44(ICD),
#Pages 4
Date of Issue 2016-07-25 (SDM, ICD)