| Presentation | 2016-08-03 [Invited Talk] A Three-Terminal Spin-Orbit Torque Switching Magnetic Memory Device Shunsuke Fukami, Tetsuro Anekawa, Ayato Ohkawara, Chaoliang Zhang, Hideo Ohno, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Integrated circuits with non-volatile spintronics memory devices open up new pathways toward ultralow-power and high-performance computing systems. Three-terminal spintronics devices allow high-speed operation and relaxed design constraints compared with the two-terminal counterpart. We here review our recent studies on three-terminal devices with spin-orbit torque induced switching, which can be reliably operated with sub-ns current pulses. Advanced structures and material engineering to further improve the device properties are also discussed. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Spin-Orbit Torque / Three-Terminal Spintronics Device / Nonvolatile Memory |
| Paper # | SDM2016-63,ICD2016-31 |
| Date of Issue | 2016-07-25 (SDM, ICD) |
| Conference Information | |
| Committee | ICD / SDM / ITE-IST |
|---|---|
| Conference Date | 2016/8/1(3days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Central Electric Club |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Analog, Mixed Analog and Digital, RF, and Sensor Interface, Low voltage/low power techniques, novel devices, circuits, and applications |
| Chair | Minoru Fujishima(Hiroshima Univ.) / Tatsuya Kunikiyo(Renesas) / Shigetoshi Sugawa(Tohoku Univ.) |
| Vice Chair | Hideto Hidaka(Renesas) / Takahiro Shinada(Tohoku Univ.) / Takayuki Hamamoto(東京理科大) / Hiroshi Ohtake(NHK) |
| Secretary | Hideto Hidaka(Hiroshima Univ.) / Takahiro Shinada(Univ. of Tokyo) / Takayuki Hamamoto(Tohoku Univ.) / Hiroshi Ohtake(Renesas) |
| Assistant | Takashi Hashimoto(Panasonic) / Masanori Natsui(Tohoku Univ.) / Hiroyuki Ito(Tokyo Inst. of Tech.) / Pham Konkuha(Univ. of Electro-Comm.) / Hiroya Ikeda(Shizuoka Univ.) |
| Paper Information | |
| Registration To | Technical Committee on Integrated Circuits and Devices / Technical Committee on Silicon Device and Materials / Technical Group on Information Sensing Technologies |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | [Invited Talk] A Three-Terminal Spin-Orbit Torque Switching Magnetic Memory Device |
| Sub Title (in English) | Toward Realization of High-Speed and Low-Power Nonvolatile Integrated Circuits |
| Keyword(1) | Spin-Orbit Torque |
| Keyword(2) | Three-Terminal Spintronics Device |
| Keyword(3) | Nonvolatile Memory |
| 1st Author's Name | Shunsuke Fukami |
| 1st Author's Affiliation | Tohoku University(Tohoku Univ.) |
| 2nd Author's Name | Tetsuro Anekawa |
| 2nd Author's Affiliation | Tohoku University(Tohoku Univ.) |
| 3rd Author's Name | Ayato Ohkawara |
| 3rd Author's Affiliation | Tohoku University(Tohoku Univ.) |
| 4th Author's Name | Chaoliang Zhang |
| 4th Author's Affiliation | Tohoku University(Tohoku Univ.) |
| 5th Author's Name | Hideo Ohno |
| 5th Author's Affiliation | Tohoku University(Tohoku Univ.) |
| Date | 2016-08-03 |
| Paper # | SDM2016-63,ICD2016-31 |
| Volume (vol) | vol.116 |
| Number (no) | SDM-172,ICD-173 |
| Page | pp.pp.99-103(SDM), pp.99-103(ICD), |
| #Pages | 5 |
| Date of Issue | 2016-07-25 (SDM, ICD) |