| Presentation | 2016-07-24 Hole-Tunneling Si1-xGex/Si DQW RTD with High Resonant Current Ayaka Shinkawa, Minoru Wakiya, Yuki Maeda, Takahiro Tsukamoto, Yoshiyuki Suda, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Hole-tunneling Si1-xGex/Si asymmetric-double-quantum-well resonant tunneling diode (ASDQW p-RTD) was optimized in terms of its structure and fabrication processes with the gas-source molecular beam epitaxy (GSMBE) method. From the aspect of crystallinity, the maximum Ge content was found to be ~0.18. We also designed the p-RTD so that the difference between the barrier height, in the collector side, and the resonant tunneling energy at the resonance voltage became larger. The fabricated Si0.82Ge0.18/Si p-RTD exhibited the highest performance with a resonant tunneling current ratio (PVCR) of 16, with suppression of thermionic emission, which are larger than those reported by others by factors of 1.5 and 7, respectively. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Resonance tunneling diode / SiGe |
| Paper # | ED2016-33 |
| Date of Issue | 2016-07-16 (ED) |
| Conference Information | |
| Committee | ED |
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| Conference Date | 2016/7/23(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Tokyo Metropolitan Univ. Minami-Osawa Campus, International House |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Semiconductor Processes and Devices |
| Chair | Koichi Maezawa(Univ. of Toyama) |
| Vice Chair | Kunio Tsuda(Toshiba) |
| Secretary | Kunio Tsuda(NEC) |
| Assistant | Manabu Arai(New JRC) / Masataka Higashiwaki(NICT) |
| Paper Information | |
| Registration To | Technical Committee on Electron Device |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Hole-Tunneling Si1-xGex/Si DQW RTD with High Resonant Current |
| Sub Title (in English) | |
| Keyword(1) | Resonance tunneling diode |
| Keyword(2) | SiGe |
| 1st Author's Name | Ayaka Shinkawa |
| 1st Author's Affiliation | Tokyo University of Agriculture and Technology(Tokyo Univ. of Agric. and Tech.) |
| 2nd Author's Name | Minoru Wakiya |
| 2nd Author's Affiliation | Tokyo University of Agriculture and Technology(Tokyo Univ. of Agric. and Tech.) |
| 3rd Author's Name | Yuki Maeda |
| 3rd Author's Affiliation | Tokyo University of Agriculture and Technology(Tokyo Univ. of Agric. and Tech.) |
| 4th Author's Name | Takahiro Tsukamoto |
| 4th Author's Affiliation | Tokyo University of Agriculture and Technology(Tokyo Univ. of Agric. and Tech.) |
| 5th Author's Name | Yoshiyuki Suda |
| 5th Author's Affiliation | Tokyo University of Agriculture and Technology(Tokyo Univ. of Agric. and Tech.) |
| Date | 2016-07-24 |
| Paper # | ED2016-33 |
| Volume (vol) | vol.116 |
| Number (no) | ED-158 |
| Page | pp.pp.31-34(ED), |
| #Pages | 4 |
| Date of Issue | 2016-07-16 (ED) |