Presentation 2016-08-25
Fabrication of GaInAsP/SOI Hybrid Fabry-Perot Laser with AlInAs-oxide Confinement Structure
Junichi Suzuki, Yusuke Hayashi, Satoshi Inoue, Tomohiro Amemiya, Nobuhiko Nishiyama, Shigehisa Arai,
PDF Download Page PDF download Page Link
Abstract(in Japanese) (See Japanese page)
Abstract(in English) In order to realize a highly efficient GaInAsP/SOI hybrid laser, we fabricated a GaInAsP/SOI hybrid Fabry-Pérot (FP) laser with AlInAs-oxide confinement structure, resulting in the first lasing operation of this structure. Prior to the fabrication of the laser, the unoxidized AlInAs layer width dependences of fundamental lasing properties were calculated and it was confirmed that threshold current and external differential quantum efficiency comparable to those of conventional III-V base lasers can be attainable. Next, by comparing PL spectra between before and after oxidation of GaInAsP/SOI bonded wafers, almost the same shapes were confirmed, which indicated a negligible influence on the active layer during the thermal oxidation process. Finally, III-V/SOI FP lasers were fabricated, and a threshold current of 50 mA and an external differential quantum efficiency of 11%/facet were obtained for the device with the unoxidezed stripe width of 4.5 µm and the cavity length of 500 µm.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Hybrid laser / AlInAs-oxide confinement / Plasma activated bonding / Silicon photonics
Paper # R2016-21,EMD2016-25,CPM2016-34,OPE2016-55,LQE2016-30
Date of Issue 2016-08-18 (R, EMD, CPM, OPE, LQE)

Conference Information
Committee LQE / OPE / EMD / R / CPM
Conference Date 2016/8/25(2days)
Place (in Japanese) (See Japanese page)
Place (in English)
Topics (in Japanese) (See Japanese page)
Topics (in English)
Chair Susumu Noda(Kyoto Univ.) / Kensuke Ogawa(Fujikura) / Yoshiteru Abe(NTT) / Hiroyasu Mawatari(NTT) / Satoru Noge(Numazu National College of Tech.)
Vice Chair Tsuyoshi Yamamoto(Fujitsu Labs.) / Kazutoshi Kato(Kyushu Univ.) / / Tetsushi Yuge(National Defense Academy) / Fumihiko Hirose(Yamagata Univ.)
Secretary Tsuyoshi Yamamoto(NTT) / Kazutoshi Kato(Tohoku Univ.) / (Keio Univ.) / Tetsushi Yuge(Mitsubishi Electric) / Fumihiko Hirose(Sumitomo Denso)
Assistant / Atsushi Aratake(NTT) / Katsumi Nakatsuhara(Kanagawa Inst. of Tech.) / Yoshiki Kayano(Univ. of Electro-Comm.) / Yuichi Hayashi(Tohoku Gakuin Univ.) / Maratt Zanikef(Kyushu Inst. of Tech.) / Nobuyuki Tamura(Hosei Univ.) / Takashi Sakamoto(NTT) / Yuichi Nakamura(Toyohashi Univ. of Tech.)

Paper Information
Registration To Technical Committee on Lasers and Quantum Electronics / Technical Committee on Optoelectronics / Technical Committee on Electromechanical Devices / Technical Committee on Reliability / Technical Committee on Component Parts and Materials
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Fabrication of GaInAsP/SOI Hybrid Fabry-Perot Laser with AlInAs-oxide Confinement Structure
Sub Title (in English)
Keyword(1) Hybrid laser
Keyword(2) AlInAs-oxide confinement
Keyword(3) Plasma activated bonding
Keyword(4) Silicon photonics
1st Author's Name Junichi Suzuki
1st Author's Affiliation Tokyo Institute of Technology(Titech)
2nd Author's Name Yusuke Hayashi
2nd Author's Affiliation Tokyo Institute of Technology(Titech)
3rd Author's Name Satoshi Inoue
3rd Author's Affiliation Tokyo Institute of Technology(Titech)
4th Author's Name Tomohiro Amemiya
4th Author's Affiliation Tokyo Institute of Technology(Titech)
5th Author's Name Nobuhiko Nishiyama
5th Author's Affiliation Tokyo Institute of Technology(Titech)
6th Author's Name Shigehisa Arai
6th Author's Affiliation Tokyo Institute of Technology(Titech)
Date 2016-08-25
Paper # R2016-21,EMD2016-25,CPM2016-34,OPE2016-55,LQE2016-30
Volume (vol) vol.116
Number (no) R-191,EMD-192,CPM-193,OPE-194,LQE-195
Page pp.pp.9-14(R), pp.9-14(EMD), pp.9-14(CPM), pp.9-14(OPE), pp.9-14(LQE),
#Pages 6
Date of Issue 2016-08-18 (R, EMD, CPM, OPE, LQE)