Presentation 2016-07-08
Perpendicular magnetic anisotropy induced by oxygen exposure at Co_2FeSi/MgO interfaces
Koki Shinohara, Takahiro Suzuki, Yota Takamura, Shigeki Nakagawa,
PDF Download Page PDF download Page Link
Abstract(in Japanese) (See Japanese page)
Abstract(in English) We attempted to add perpendicular magnetic anisotropy (PMA) to half-metallic full-Heusler Co_2FeSi (CFS) alloy thin films with potential application in magnetic tunnel junction (MTJ). CFS/MgO stacked structure showed PMA by setting the thickness of CFS below 0.7 nm. It was confirmed PMA is originated from CFS/MgO interfaces. Furthermore, we found that more stable PMA was obtained by introducing oxygen exposure process after the deposition of CFS layer before the preparation of MgO layer. This process is very useful as a method to modify the structure and chemical state at the interface and effective to form ferromagnetic CFS layers with both half-metallic ferromagnetism and PMA.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Full-Heusler alloys / Perpendicular magnetic anisotropy / Half-metallic ferromagnets / Interfacial magnetic anisotropy / Magnetic random access memory
Paper # MR2016-16
Date of Issue 2016-07-01 (MR)

Conference Information
Committee MR / ITE-MMS
Conference Date 2016/7/8(1days)
Place (in Japanese) (See Japanese page)
Place (in English) Chuo Univ.
Topics (in Japanese) (See Japanese page)
Topics (in English) Solid State Memory, Media, etc.
Chair Yoshihiro Okamoto(Ehime Univ.) / Eiichi Miyashita(NHK)
Vice Chair
Secretary (Kogakuin Univ.) / (AIST)
Assistant Kiwamu Kudo(Toshiba) / Shuhei Yoshida(Kinki Univ.)

Paper Information
Registration To Technical Committee on Magnetic Recording / Technical Group on Multi-media Storage
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Perpendicular magnetic anisotropy induced by oxygen exposure at Co_2FeSi/MgO interfaces
Sub Title (in English)
Keyword(1) Full-Heusler alloys
Keyword(2) Perpendicular magnetic anisotropy
Keyword(3) Half-metallic ferromagnets
Keyword(4) Interfacial magnetic anisotropy
Keyword(5) Magnetic random access memory
1st Author's Name Koki Shinohara
1st Author's Affiliation Tokyo Institute of Technology(Tokyo Tech.)
2nd Author's Name Takahiro Suzuki
2nd Author's Affiliation Tokyo Institute of Technology(Tokyo Tech.)
3rd Author's Name Yota Takamura
3rd Author's Affiliation Tokyo Institute of Technology(Tokyo Tech.)
4th Author's Name Shigeki Nakagawa
4th Author's Affiliation Tokyo Institute of Technology(Tokyo Tech.)
Date 2016-07-08
Paper # MR2016-16
Volume (vol) vol.116
Number (no) MR-125
Page pp.pp.19-24(MR),
#Pages 6
Date of Issue 2016-07-01 (MR)