Presentation 2016-07-08
[Invited Talk] Atomic switch-type resistance change memory based on cation transport in oxide thin films
Tohru Tsuruoka,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) We have investigated the switching mechanism and functionalities of Cu,Ag/Ta2O5/Pt atomic switch-type resistance change memories based on the transport of metal ions in oxide thin films and electrochemical reactions at metal/oxide interfaces. We proposed the operation model and confirmed the validity of our model. The effects of moisture absorption in the oxide matrix and of redox reactions at Ag,Cu/Ta2O5 interfaces on the switching characteristics are discussed. As the unique function of atomic switches, the conductance quantization and synaptic behavior are also demonstrated.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) oxide / cation transport / redox reaction / Moisture absorption / conductance quantization / synaptic behavior
Paper # MR2016-17
Date of Issue 2016-07-01 (MR)

Conference Information
Committee MR / ITE-MMS
Conference Date 2016/7/8(1days)
Place (in Japanese) (See Japanese page)
Place (in English) Chuo Univ.
Topics (in Japanese) (See Japanese page)
Topics (in English) Solid State Memory, Media, etc.
Chair Yoshihiro Okamoto(Ehime Univ.) / Eiichi Miyashita(NHK)
Vice Chair
Secretary (Kogakuin Univ.) / (AIST)
Assistant Kiwamu Kudo(Toshiba) / Shuhei Yoshida(Kinki Univ.)

Paper Information
Registration To Technical Committee on Magnetic Recording / Technical Group on Multi-media Storage
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) [Invited Talk] Atomic switch-type resistance change memory based on cation transport in oxide thin films
Sub Title (in English)
Keyword(1) oxide
Keyword(2) cation transport
Keyword(3) redox reaction
Keyword(4) Moisture absorption
Keyword(5) conductance quantization
Keyword(6) synaptic behavior
1st Author's Name Tohru Tsuruoka
1st Author's Affiliation National Institute for Materials Science(NIMS)
Date 2016-07-08
Paper # MR2016-17
Volume (vol) vol.116
Number (no) MR-125
Page pp.pp.25-29(MR),
#Pages 5
Date of Issue 2016-07-01 (MR)