| Presentation | 2016-06-29 Effect of Al2O3layer on leakage current properties for DRAM capacitor with ZrO2/Al2O3/ZrO2multilayer Takashi Onaya, Toshihide Nabatame, Tomomi Sawada, Kazunori Kurishima, Naomi Sawamoto, Akihiko Ohi, Toyohiro Chikyo, Atsushi Ogura, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We studied characteristic of DRAM capacitors with ZrO2/Al2O3/ZrO2 (ZAZ) multilayer fabricated by atomic layer deposition and post-deposition annealing (PDA) at 600 oC in O2. The dielectric constant of ZrO2 single-layer exhibited about 28 because of the tetragonal, orthorhombic and cubic phase. The leakage current density of TiN/ZAZ/TiN MIM capacitor with 0.3 nm thick Al2O3 layer was drastically reduced by 1/6 compared to that of TiN/ZrO2/TiN capacitor. In addition, the k value of the overall insulating layer maintained around 28 in regions of 0.4 nm thick or less Al2O3 layer. We found that ZAZ multilayer with 0.3 nm thick Al2O3 layer plays an important role of the reduction of the leakage current density without decline of the k value of the overall insulating layer. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | ZrO2/Al2O3/ZrO2 (ZAZ) / DRAM / Atomic layer deposition (ALD) / high-k |
| Paper # | SDM2016-37 |
| Date of Issue | 2016-06-22 (SDM) |
| Conference Information | |
| Committee | SDM |
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| Conference Date | 2016/6/29(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Campus Innovation Center Tokyo |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Material Science and Process Technology for MOS Devices and Memories |
| Chair | Tatsuya Kunikiyo(Renesas) |
| Vice Chair | Takahiro Shinada(Tohoku Univ.) |
| Secretary | Takahiro Shinada(Tohoku Univ.) |
| Assistant | Hiroya Ikeda(Shizuoka Univ.) |
| Paper Information | |
| Registration To | Technical Committee on Silicon Device and Materials |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Effect of Al2O3layer on leakage current properties for DRAM capacitor with ZrO2/Al2O3/ZrO2multilayer |
| Sub Title (in English) | |
| Keyword(1) | ZrO2/Al2O3/ZrO2 (ZAZ) |
| Keyword(2) | DRAM |
| Keyword(3) | Atomic layer deposition (ALD) |
| Keyword(4) | high-k |
| 1st Author's Name | Takashi Onaya |
| 1st Author's Affiliation | Meiji University/National Institute for Materials Science(Meiji Univ./NIMS) |
| 2nd Author's Name | Toshihide Nabatame |
| 2nd Author's Affiliation | National Institute for Materials Science/JST-CREST(NIMS/JST-CREST) |
| 3rd Author's Name | Tomomi Sawada |
| 3rd Author's Affiliation | National Institute for Materials Science/JST-CREST(NIMS/JST-CREST) |
| 4th Author's Name | Kazunori Kurishima |
| 4th Author's Affiliation | Meiji University/National Institute for Materials Science(Meiji Univ./NIMS) |
| 5th Author's Name | Naomi Sawamoto |
| 5th Author's Affiliation | Meiji University(Meiji Univ.) |
| 6th Author's Name | Akihiko Ohi |
| 6th Author's Affiliation | National Institute for Materials Science(NIMS) |
| 7th Author's Name | Toyohiro Chikyo |
| 7th Author's Affiliation | National Institute for Materials Science(NIMS) |
| 8th Author's Name | Atsushi Ogura |
| 8th Author's Affiliation | Meiji University(Meiji Univ.) |
| Date | 2016-06-29 |
| Paper # | SDM2016-37 |
| Volume (vol) | vol.116 |
| Number (no) | SDM-118 |
| Page | pp.pp.27-32(SDM), |
| #Pages | 6 |
| Date of Issue | 2016-06-22 (SDM) |