| Presentation | 2016-05-20 Annealing of p-type wide-gap CuxZnyS thin films deposited by the photochemical deposition method Bayingaerdi Tong, Masaya Ichimura, |
|---|---|
| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Zn-rich of CuxZnyS is a transparent p-type semiconductor. We prepared the CuxZnyS thin films by the photochemical deposition method, and investigated changes in properties due to annealing. The sample before annealing was amorphous, and its composition was Cu: Zn: S: O = 0.02: 0.34: 0.43: 0.21. The band gap was estimated to be about 3.5 eV from the optical transmission measurement. p-type conductivity was confirmed by the photoelectrochemical measurement. After annealing at 400ºC for 1 h, formation of the ZnS phase was observed by X-ray diffraction measurement. While the band gap did not change significantly, the conductivity type became close to intrinsic. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Photochemical deposition (PCD) / CuxZnyS / Transparent semiconductor / Sulfur annealing |
| Paper # | ED2016-22,CPM2016-10,SDM2016-27 |
| Date of Issue | 2016-05-12 (ED, CPM, SDM) |
| Conference Information | |
| Committee | CPM / ED / SDM |
|---|---|
| Conference Date | 2016/5/19(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Shizuoka University, Hamamatsu campus (Joint Research Lab.) |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | crystal growth、devices characterization , etc. |
| Chair | Satoru Noge(Numazu National College of Tech.) / Koichi Maezawa(Univ. of Toyama) / Yuzou Oono(Univ. of Tsukuba) |
| Vice Chair | Fumihiko Hirose(Yamagata Univ.) / Kunio Tsuda(Toshiba) / Tatsuya Kunikiyo(Renesas) |
| Secretary | Fumihiko Hirose(NTT) / Kunio Tsuda(Nihon Univ.) / Tatsuya Kunikiyo(NEC) |
| Assistant | Takashi Sakamoto(NTT) / Yuichi Nakamura(Toyohashi Univ. of Tech.) / Manabu Arai(New JRC) / Masataka Higashiwaki(NICT) / Tadashi Yamaguchi(Renesas) |
| Paper Information | |
| Registration To | Technical Committee on Component Parts and Materials / Technical Committee on Electron Device / Technical Committee on Silicon Device and Materials |
|---|---|
| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Annealing of p-type wide-gap CuxZnyS thin films deposited by the photochemical deposition method |
| Sub Title (in English) | |
| Keyword(1) | Photochemical deposition (PCD) |
| Keyword(2) | CuxZnyS |
| Keyword(3) | Transparent semiconductor |
| Keyword(4) | Sulfur annealing |
| 1st Author's Name | Bayingaerdi Tong |
| 1st Author's Affiliation | Nagoya Institute of Technology(NITech) |
| 2nd Author's Name | Masaya Ichimura |
| 2nd Author's Affiliation | Nagoya Institute of Technology(NITech) |
| Date | 2016-05-20 |
| Paper # | ED2016-22,CPM2016-10,SDM2016-27 |
| Volume (vol) | vol.116 |
| Number (no) | ED-48,CPM-49,SDM-50 |
| Page | pp.pp.43-46(ED), pp.43-46(CPM), pp.43-46(SDM), |
| #Pages | 4 |
| Date of Issue | 2016-05-12 (ED, CPM, SDM) |