| Presentation | 2016-05-19 Investigation of interface formation process between insulator and nitride-semiconductor for insulated gate transistors Yutaka Kondo, Masatoshi Shinohara, Tomoki Hikosaka, Makoto Baba, Hiroshi Okada, Hiroto Sekiguchi, Keisuke Yamane, Akihiro Wakahara, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | |
| Paper # | ED2016-17,CPM2016-5,SDM2016-22 |
| Date of Issue | 2016-05-12 (ED, CPM, SDM) |
| Conference Information | |
| Committee | CPM / ED / SDM |
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| Conference Date | 2016/5/19(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Shizuoka University, Hamamatsu campus (Joint Research Lab.) |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | crystal growth、devices characterization , etc. |
| Chair | Satoru Noge(Numazu National College of Tech.) / Koichi Maezawa(Univ. of Toyama) / Yuzou Oono(Univ. of Tsukuba) |
| Vice Chair | Fumihiko Hirose(Yamagata Univ.) / Kunio Tsuda(Toshiba) / Tatsuya Kunikiyo(Renesas) |
| Secretary | Fumihiko Hirose(NTT) / Kunio Tsuda(Nihon Univ.) / Tatsuya Kunikiyo(NEC) |
| Assistant | Takashi Sakamoto(NTT) / Yuichi Nakamura(Toyohashi Univ. of Tech.) / Manabu Arai(New JRC) / Masataka Higashiwaki(NICT) / Tadashi Yamaguchi(Renesas) |
| Paper Information | |
| Registration To | Technical Committee on Component Parts and Materials / Technical Committee on Electron Device / Technical Committee on Silicon Device and Materials |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Investigation of interface formation process between insulator and nitride-semiconductor for insulated gate transistors |
| Sub Title (in English) | |
| Keyword(1) | |
| 1st Author's Name | Yutaka Kondo |
| 1st Author's Affiliation | Toyohashi University of Technology(Toyohashi Univ. Technol.) |
| 2nd Author's Name | Masatoshi Shinohara |
| 2nd Author's Affiliation | Toyohashi University of Technology(Toyohashi Univ. Technol.) |
| 3rd Author's Name | Tomoki Hikosaka |
| 3rd Author's Affiliation | Toyohashi University of Technology(Toyohashi Univ. Technol.) |
| 4th Author's Name | Makoto Baba |
| 4th Author's Affiliation | Toyohashi University of Technology(Toyohashi Univ. Technol.) |
| 5th Author's Name | Hiroshi Okada |
| 5th Author's Affiliation | Electronics-Inspired Interdisciplinary Research Institute, Toyohashi University of Technology(EIIRIS, Toyohashi Univ. Technol.) |
| 6th Author's Name | Hiroto Sekiguchi |
| 6th Author's Affiliation | Toyohashi University of Technology(Toyohashi Univ. Technol.) |
| 7th Author's Name | Keisuke Yamane |
| 7th Author's Affiliation | Toyohashi University of Technology(Toyohashi Univ. Technol.) |
| 8th Author's Name | Akihiro Wakahara |
| 8th Author's Affiliation | Toyohashi University of Technology(Toyohashi Univ. Technol.) |
| Date | 2016-05-19 |
| Paper # | ED2016-17,CPM2016-5,SDM2016-22 |
| Volume (vol) | vol.116 |
| Number (no) | ED-48,CPM-49,SDM-50 |
| Page | pp.pp.19-23(ED), pp.19-23(CPM), pp.19-23(SDM), |
| #Pages | 5 |
| Date of Issue | 2016-05-12 (ED, CPM, SDM) |