| Presentation | 2016-05-20 Heteroepitaxial Growth of GaSb Films on Si(111)-√3x√3-Ga Surface Phase Hiroya Shimoyama, Masayuki Mori, Koichi Maezawa, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | The heteroepitaxial growth of GaSb films via Ga-induced surface phase (Si(111)-√3×√3-Ga) on Si(111) was studied. The growth of GaSb was performed by using two-step growth procedure. We found that the high quality GaSb films without twins can be grown by using the growth temperature of 260 oC during the 1st layer deposition, in which the flux ratio of Sb/Ga was precisely controlled to be 1.0. We confirmed the twinless nature by RHEED observation and XRD -scan pattern. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | GaSb / Si(111) / Heteroepitaxy / Ga-induced surface phase |
| Paper # | ED2016-24,CPM2016-12,SDM2016-29 |
| Date of Issue | 2016-05-12 (ED, CPM, SDM) |
| Conference Information | |
| Committee | CPM / ED / SDM |
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| Conference Date | 2016/5/19(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Shizuoka University, Hamamatsu campus (Joint Research Lab.) |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | crystal growth、devices characterization , etc. |
| Chair | Satoru Noge(Numazu National College of Tech.) / Koichi Maezawa(Univ. of Toyama) / Yuzou Oono(Univ. of Tsukuba) |
| Vice Chair | Fumihiko Hirose(Yamagata Univ.) / Kunio Tsuda(Toshiba) / Tatsuya Kunikiyo(Renesas) |
| Secretary | Fumihiko Hirose(NTT) / Kunio Tsuda(Nihon Univ.) / Tatsuya Kunikiyo(NEC) |
| Assistant | Takashi Sakamoto(NTT) / Yuichi Nakamura(Toyohashi Univ. of Tech.) / Manabu Arai(New JRC) / Masataka Higashiwaki(NICT) / Tadashi Yamaguchi(Renesas) |
| Paper Information | |
| Registration To | Technical Committee on Component Parts and Materials / Technical Committee on Electron Device / Technical Committee on Silicon Device and Materials |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Heteroepitaxial Growth of GaSb Films on Si(111)-√3x√3-Ga Surface Phase |
| Sub Title (in English) | |
| Keyword(1) | GaSb |
| Keyword(2) | Si(111) |
| Keyword(3) | Heteroepitaxy |
| Keyword(4) | Ga-induced surface phase |
| 1st Author's Name | Hiroya Shimoyama |
| 1st Author's Affiliation | University of Toyama(Univ. of Toyama) |
| 2nd Author's Name | Masayuki Mori |
| 2nd Author's Affiliation | University of Toyama(Univ. of Toyama) |
| 3rd Author's Name | Koichi Maezawa |
| 3rd Author's Affiliation | University of Toyama(Univ. of Toyama) |
| Date | 2016-05-20 |
| Paper # | ED2016-24,CPM2016-12,SDM2016-29 |
| Volume (vol) | vol.116 |
| Number (no) | ED-48,CPM-49,SDM-50 |
| Page | pp.pp.51-54(ED), pp.51-54(CPM), pp.51-54(SDM), |
| #Pages | 4 |
| Date of Issue | 2016-05-12 (ED, CPM, SDM) |