| Presentation | 2016-04-08 [Invited Talk] OFET Device Characteristics utilizing Low Work-function Metal Interface Control Layer Shun-ichiro Ohmi, Yasutaka Maeda, Syu Furuyama, Mizuha Hiroki, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | High hole mobility, higher than that of a-Si, has been reported for the organic semiconductor field-effect transistor (OFET) utilizing pentacene, ruburene, and other materials. However, the electron mobility in those materials is significantly low compared to the hole mobility and device characteristics are not stable in the air. Therefore, the other materials such as fullerene is necessary to be introduced for the n-channel OFET to fabricate an organic CMOS. Furthermore, the device scaling and integration are the issues for the OFETs because of the difficulties to use lithography process. In this paper, we have investigated the effect of metal interface layer with low work-function, such as nitrogen-doped LaB6 which is stable in the air and Yb which is able to be evaporated, on the OFET device characteristics to realize the single organic semiconductor CMOS. Furthermore, fabrication of top-gate type OFET utilizing lithography process was also examined. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | pentacene / rubrene / nitrogen-doped LaB6 / Yb / lithography / top-gate type OFET / CMOS |
| Paper # | SDM2016-3,OME2016-3 |
| Date of Issue | 2016-04-01 (SDM, OME) |
| Conference Information | |
| Committee | SDM / OME |
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| Conference Date | 2016/4/8(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Okinawa Prefectural Museum & Art Museum |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Thin film devices, etc |
| Chair | Yuzou Oono(Univ. of Tsukuba) / Naoki Matsuda(AIST) |
| Vice Chair | Tatsuya Kunikiyo(Renesas) / Tatsuo Mori(Aichi Inst. of Tech.) |
| Secretary | Tatsuya Kunikiyo(Tohoku Univ.) / Tatsuo Mori(NTT) |
| Assistant | Tadashi Yamaguchi(Renesas) / Hirotake Kajii(Osaka Univ.) / Dai Taguchi(Tokyo Inst. of Tech.) |
| Paper Information | |
| Registration To | Technical Committee on Silicon Device and Materials / Technical Committee on Organic Molecular Electronics |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | [Invited Talk] OFET Device Characteristics utilizing Low Work-function Metal Interface Control Layer |
| Sub Title (in English) | |
| Keyword(1) | pentacene |
| Keyword(2) | rubrene |
| Keyword(3) | nitrogen-doped LaB6 |
| Keyword(4) | Yb |
| Keyword(5) | lithography |
| Keyword(6) | top-gate type OFET |
| Keyword(7) | CMOS |
| 1st Author's Name | Shun-ichiro Ohmi |
| 1st Author's Affiliation | Tokyo Institute of Technology(Tokyo Tech) |
| 2nd Author's Name | Yasutaka Maeda |
| 2nd Author's Affiliation | Tokyo Institute of Technology(Tokyo Tech) |
| 3rd Author's Name | Syu Furuyama |
| 3rd Author's Affiliation | Tokyo Institute of Technology(Tokyo Tech) |
| 4th Author's Name | Mizuha Hiroki |
| 4th Author's Affiliation | Tokyo Institute of Technology(Tokyo Tech) |
| Date | 2016-04-08 |
| Paper # | SDM2016-3,OME2016-3 |
| Volume (vol) | vol.116 |
| Number (no) | SDM-1,OME-2 |
| Page | pp.pp.11-15(SDM), pp.11-15(OME), |
| #Pages | 5 |
| Date of Issue | 2016-04-01 (SDM, OME) |