Presentation 2016-04-20
SiO-assisted Dolan technique for fabrication of tiny Al tunnel junctions with improved uniformity
Takato Tokuyama, Hiroshi Shimada, Yoshinao Mizugaki,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) The Dolan technique has been widely used for mesoscopic device fabrication, in which tiny tunnel junctions are realized by electron-beam lithography with a bilayer resist followed by two-angle shadow evaporation. As the dimensions of tunnel junctions are miniaturized, fluctuation of lithography limits the uniformity of junctions. In this work, we propose a SiO-assisted Dolan technique as a method for improving the uniformity. We also propose an evaluation method of junction uniformity via electrical conduction properties of one-dimensional junction arrays. We experimentally demonstrate better junction uniformity of the SiO-assisted Dolan technique in comparison with those fabricated using the conventional one.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Dolan technique / tiny tunnel junctions / charging effect / shadow evaporation / electron-beam lithography
Paper # SCE2016-10
Date of Issue 2016-04-13 (SCE)

Conference Information
Committee SCE
Conference Date 2016/4/20(1days)
Place (in Japanese) (See Japanese page)
Place (in English)
Topics (in Japanese) (See Japanese page)
Topics (in English)
Chair Nobuyuki Yoshikawa(Yokohama National Univ.)
Vice Chair
Secretary (Yokohama National Univ.)
Assistant Hiroyuki Akaike(Nagoya Univ.)

Paper Information
Registration To Technical Committee on Superconductive Electronics
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) SiO-assisted Dolan technique for fabrication of tiny Al tunnel junctions with improved uniformity
Sub Title (in English)
Keyword(1) Dolan technique
Keyword(2) tiny tunnel junctions
Keyword(3) charging effect
Keyword(4) shadow evaporation
Keyword(5) electron-beam lithography
1st Author's Name Takato Tokuyama
1st Author's Affiliation The University of Electro-Communications(UEC Tokyo)
2nd Author's Name Hiroshi Shimada
2nd Author's Affiliation The University of Electro-Communications(UEC Tokyo)
3rd Author's Name Yoshinao Mizugaki
3rd Author's Affiliation The University of Electro-Communications(UEC Tokyo)
Date 2016-04-20
Paper # SCE2016-10
Volume (vol) vol.116
Number (no) SCE-6
Page pp.pp.55-60(SCE),
#Pages 6
Date of Issue 2016-04-13 (SCE)