| Presentation | 2016-04-08 Electrical Characterization of Germanium films Crystallized by Atmospheric Pressure Micro-Thermal-Plasma-Jet Irradiation and Fabrication of High-Performance Thin Film Transistors. Taichi Nakatani, Hiromu Harada, Seiichiro Higashi, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We investigated the electrical properties of the crystalline germanium films crystallized by μ-TPJ irradiation. High speed lateral crystallization (HSLC-) Ge shows low hole concentration (1.5 x 10^16 cm^-3) and high hall mobility (1070 cm^2/Vs). P-type thin film transistors (TFT) using HSLC-Ge and SiO2 film as the gate dielectric achieved field effect mobility (μFE) of 196 cm^2/Vs and ON/OFF ratio (RON/OFF) of 1.4 x 10^4. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Micro-Thermal-Plasma-Jet / Germanium / Thin Film Transistor |
| Paper # | SDM2016-9,OME2016-9 |
| Date of Issue | 2016-04-01 (SDM, OME) |
| Conference Information | |
| Committee | SDM / OME |
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| Conference Date | 2016/4/8(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Okinawa Prefectural Museum & Art Museum |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Thin film devices, etc |
| Chair | Yuzou Oono(Univ. of Tsukuba) / Naoki Matsuda(AIST) |
| Vice Chair | Tatsuya Kunikiyo(Renesas) / Tatsuo Mori(Aichi Inst. of Tech.) |
| Secretary | Tatsuya Kunikiyo(Tohoku Univ.) / Tatsuo Mori(NTT) |
| Assistant | Tadashi Yamaguchi(Renesas) / Hirotake Kajii(Osaka Univ.) / Dai Taguchi(Tokyo Inst. of Tech.) |
| Paper Information | |
| Registration To | Technical Committee on Silicon Device and Materials / Technical Committee on Organic Molecular Electronics |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Electrical Characterization of Germanium films Crystallized by Atmospheric Pressure Micro-Thermal-Plasma-Jet Irradiation and Fabrication of High-Performance Thin Film Transistors. |
| Sub Title (in English) | |
| Keyword(1) | Micro-Thermal-Plasma-Jet |
| Keyword(2) | Germanium |
| Keyword(3) | Thin Film Transistor |
| 1st Author's Name | Taichi Nakatani |
| 1st Author's Affiliation | Hiroshima University(Hiroshima Univ.) |
| 2nd Author's Name | Hiromu Harada |
| 2nd Author's Affiliation | Hiroshima University(Hiroshima Univ.) |
| 3rd Author's Name | Seiichiro Higashi |
| 3rd Author's Affiliation | Hiroshima University(Hiroshima Univ.) |
| Date | 2016-04-08 |
| Paper # | SDM2016-9,OME2016-9 |
| Volume (vol) | vol.116 |
| Number (no) | SDM-1,OME-2 |
| Page | pp.pp.35-38(SDM), pp.35-38(OME), |
| #Pages | 4 |
| Date of Issue | 2016-04-01 (SDM, OME) |