| Presentation | 2016-04-09 Self-Aligned Four-Terminal Metal Double-Gate LT Ni-SPC Poly-Si TFT with High-k Gate Stack Syota Nibe, Hiroki Ohsawa, Akito Hara, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Self-aligned four-terminal (4T) metal double-gate (MeDG) low-temperature (LT) polycrystalline-silicon (poly-Si) thin film transistors (TFTs) were fabricated using nickel-induced solid-phase crystallization (Ni-SPC), an inexpensive crystallization process, at low temperature. In this experiment, we used high-k HfO2 gate stacks to enhance the performance of the TFTs and achieved a low subthreshold swing value (s-value) and high on-current. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Metal Induced Crystallization / Ni-SPC / TFT / Poly-Si / Four-Terminal / Double-Gate |
| Paper # | SDM2016-15,OME2016-15 |
| Date of Issue | 2016-04-01 (SDM, OME) |
| Conference Information | |
| Committee | SDM / OME |
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| Conference Date | 2016/4/8(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Okinawa Prefectural Museum & Art Museum |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Thin film devices, etc |
| Chair | Yuzou Oono(Univ. of Tsukuba) / Naoki Matsuda(AIST) |
| Vice Chair | Tatsuya Kunikiyo(Renesas) / Tatsuo Mori(Aichi Inst. of Tech.) |
| Secretary | Tatsuya Kunikiyo(Tohoku Univ.) / Tatsuo Mori(NTT) |
| Assistant | Tadashi Yamaguchi(Renesas) / Hirotake Kajii(Osaka Univ.) / Dai Taguchi(Tokyo Inst. of Tech.) |
| Paper Information | |
| Registration To | Technical Committee on Silicon Device and Materials / Technical Committee on Organic Molecular Electronics |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Self-Aligned Four-Terminal Metal Double-Gate LT Ni-SPC Poly-Si TFT with High-k Gate Stack |
| Sub Title (in English) | |
| Keyword(1) | Metal Induced Crystallization |
| Keyword(2) | Ni-SPC |
| Keyword(3) | TFT |
| Keyword(4) | Poly-Si |
| Keyword(5) | Four-Terminal |
| Keyword(6) | Double-Gate |
| 1st Author's Name | Syota Nibe |
| 1st Author's Affiliation | Tohoku Gakuin University(Tohoku Gakuin Univ.) |
| 2nd Author's Name | Hiroki Ohsawa |
| 2nd Author's Affiliation | Tohoku Gakuin University(Tohoku Gakuin Univ.) |
| 3rd Author's Name | Akito Hara |
| 3rd Author's Affiliation | Tohoku Gakuin University(Tohoku Gakuin Univ.) |
| Date | 2016-04-09 |
| Paper # | SDM2016-15,OME2016-15 |
| Volume (vol) | vol.116 |
| Number (no) | SDM-1,OME-2 |
| Page | pp.pp.61-65(SDM), pp.61-65(OME), |
| #Pages | 5 |
| Date of Issue | 2016-04-01 (SDM, OME) |