Presentation 2016-04-09
Effect of Low Temperature Annealing of Sputtered SiO2 for Gate Insulator in Poly-Si TFTs
Hikaru Tamashiro, Kimihiko Imura, Tatsuya Okada, Takashi Noguchi,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English)
Keyword(in Japanese) (See Japanese page)
Keyword(in English)
Paper # SDM2016-16,OME2016-16
Date of Issue 2016-04-01 (SDM, OME)

Conference Information
Committee SDM / OME
Conference Date 2016/4/8(2days)
Place (in Japanese) (See Japanese page)
Place (in English) Okinawa Prefectural Museum & Art Museum
Topics (in Japanese) (See Japanese page)
Topics (in English) Thin film devices, etc
Chair Yuzou Oono(Univ. of Tsukuba) / Naoki Matsuda(AIST)
Vice Chair Tatsuya Kunikiyo(Renesas) / Tatsuo Mori(Aichi Inst. of Tech.)
Secretary Tatsuya Kunikiyo(Tohoku Univ.) / Tatsuo Mori(NTT)
Assistant Tadashi Yamaguchi(Renesas) / Hirotake Kajii(Osaka Univ.) / Dai Taguchi(Tokyo Inst. of Tech.)

Paper Information
Registration To Technical Committee on Silicon Device and Materials / Technical Committee on Organic Molecular Electronics
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Effect of Low Temperature Annealing of Sputtered SiO2 for Gate Insulator in Poly-Si TFTs
Sub Title (in English)
Keyword(1)
1st Author's Name Hikaru Tamashiro
1st Author's Affiliation University of the Ryukyus(Univ. Ryukyu)
2nd Author's Name Kimihiko Imura
2nd Author's Affiliation University of the Ryukyus(Univ. Ryukyu)
3rd Author's Name Tatsuya Okada
3rd Author's Affiliation University of the Ryukyus(Univ. Ryukyu)
4th Author's Name Takashi Noguchi
4th Author's Affiliation University of the Ryukyus(Univ. Ryukyu)
Date 2016-04-09
Paper # SDM2016-16,OME2016-16
Volume (vol) vol.116
Number (no) SDM-1,OME-2
Page pp.pp.67-69(SDM), pp.67-69(OME),
#Pages 3
Date of Issue 2016-04-01 (SDM, OME)