Presentation 2016-04-08
Low-temperature formation of Sn-doped Ge on insulating substrate by metal-induced lateral crystallization
Takatsugu Sakai, Ryo Matsumura, Taizoh Sadoh, Masanobu Miyao,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English)
Keyword(in Japanese) (See Japanese page)
Keyword(in English)
Paper # SDM2016-7,OME2016-7
Date of Issue 2016-04-01 (SDM, OME)

Conference Information
Committee SDM / OME
Conference Date 2016/4/8(2days)
Place (in Japanese) (See Japanese page)
Place (in English) Okinawa Prefectural Museum & Art Museum
Topics (in Japanese) (See Japanese page)
Topics (in English) Thin film devices, etc
Chair Yuzou Oono(Univ. of Tsukuba) / Naoki Matsuda(AIST)
Vice Chair Tatsuya Kunikiyo(Renesas) / Tatsuo Mori(Aichi Inst. of Tech.)
Secretary Tatsuya Kunikiyo(Tohoku Univ.) / Tatsuo Mori(NTT)
Assistant Tadashi Yamaguchi(Renesas) / Hirotake Kajii(Osaka Univ.) / Dai Taguchi(Tokyo Inst. of Tech.)

Paper Information
Registration To Technical Committee on Silicon Device and Materials / Technical Committee on Organic Molecular Electronics
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Low-temperature formation of Sn-doped Ge on insulating substrate by metal-induced lateral crystallization
Sub Title (in English)
Keyword(1)
1st Author's Name Takatsugu Sakai
1st Author's Affiliation Kyushu University(Kyushu Univ.)
2nd Author's Name Ryo Matsumura
2nd Author's Affiliation Kyushu University(Kyushu Univ.)
3rd Author's Name Taizoh Sadoh
3rd Author's Affiliation Kyushu University(Kyushu Univ.)
4th Author's Name Masanobu Miyao
4th Author's Affiliation Kyushu University(Kyushu Univ.)
Date 2016-04-08
Paper # SDM2016-7,OME2016-7
Volume (vol) vol.116
Number (no) SDM-1,OME-2
Page pp.pp.29-30(SDM), pp.29-30(OME),
#Pages 2
Date of Issue 2016-04-01 (SDM, OME)