Presentation 2016-04-08
Non-thermal energy utilized low temperature solid phase crystallization of amorphous Ge on SiO2 substrate
Kinta Kusano, Kazuki Kudo, Kodai Tomouchi, Taisei Sakaguchi, Kenta Moto, Shinichi Motoyama, Yutaka Kusuda, Masahiro Furuta, Nobuyuki Naka, Tomoko Numata, Kenichiro Takakura, Isao Tsunoda,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) We have investigated the low-temperature SPC of amorphous Ge on insulating substrate. High temperature and long time annealing are necessary to obtain the crystalline Ge on insulating substrate by conventional SPC method. In order to enhance the crystal nucleation, the initial amorphicity modulation induced by electron irradiation was carried out. The incubation time for crystal nucleation was decreased to 1/50 of that without electron irradiation. Furthermore, the compressive stress stimulated MIC of amorphous Ge on insulating substrate has examined. As a result, the solid phase crystallization of amorphous Ge was significantly enhanced (~ 1000 times). In addition, the crystallization temperature can be decreased to 120 oC. In this way, low temperature crystallization below the softening temperature of low cost plastic substrate (150 oC) becomes possible.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Germanium / Solid phase crystallization / Metal induced crystallization / Electron beam irradiation / Compressive stress stimulation
Paper # SDM2016-8,OME2016-8
Date of Issue 2016-04-01 (SDM, OME)

Conference Information
Committee SDM / OME
Conference Date 2016/4/8(2days)
Place (in Japanese) (See Japanese page)
Place (in English) Okinawa Prefectural Museum & Art Museum
Topics (in Japanese) (See Japanese page)
Topics (in English) Thin film devices, etc
Chair Yuzou Oono(Univ. of Tsukuba) / Naoki Matsuda(AIST)
Vice Chair Tatsuya Kunikiyo(Renesas) / Tatsuo Mori(Aichi Inst. of Tech.)
Secretary Tatsuya Kunikiyo(Tohoku Univ.) / Tatsuo Mori(NTT)
Assistant Tadashi Yamaguchi(Renesas) / Hirotake Kajii(Osaka Univ.) / Dai Taguchi(Tokyo Inst. of Tech.)

Paper Information
Registration To Technical Committee on Silicon Device and Materials / Technical Committee on Organic Molecular Electronics
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Non-thermal energy utilized low temperature solid phase crystallization of amorphous Ge on SiO2 substrate
Sub Title (in English)
Keyword(1) Germanium
Keyword(2) Solid phase crystallization
Keyword(3) Metal induced crystallization
Keyword(4) Electron beam irradiation
Keyword(5) Compressive stress stimulation
1st Author's Name Kinta Kusano
1st Author's Affiliation National Institute of Technology, Kumamoto College(NIT, Kumamoto)
2nd Author's Name Kazuki Kudo
2nd Author's Affiliation National Institute of Technology, Kumamoto College(NIT, Kumamoto)
3rd Author's Name Kodai Tomouchi
3rd Author's Affiliation National Institute of Technology, Kumamoto College(NIT, Kumamoto)
4th Author's Name Taisei Sakaguchi
4th Author's Affiliation National Institute of Technology, Kumamoto College(NIT, Kumamoto)
5th Author's Name Kenta Moto
5th Author's Affiliation National Institute of Technology, Kumamoto College(NIT, Kumamoto)
6th Author's Name Shinichi Motoyama
6th Author's Affiliation SAMCO(SAMCO)
7th Author's Name Yutaka Kusuda
7th Author's Affiliation SAMCO(SAMCO)
8th Author's Name Masahiro Furuta
8th Author's Affiliation SAMCO(SAMCO)
9th Author's Name Nobuyuki Naka
9th Author's Affiliation HORIBA(HORIBA)
10th Author's Name Tomoko Numata
10th Author's Affiliation HORIBA(HORIBA)
11th Author's Name Kenichiro Takakura
11th Author's Affiliation National Institute of Technology, Kumamoto College(NIT, Kumamoto)
12th Author's Name Isao Tsunoda
12th Author's Affiliation National Institute of Technology, Kumamoto College(NIT, Kumamoto)
Date 2016-04-08
Paper # SDM2016-8,OME2016-8
Volume (vol) vol.116
Number (no) SDM-1,OME-2
Page pp.pp.31-34(SDM), pp.31-34(OME),
#Pages 4
Date of Issue 2016-04-01 (SDM, OME)