| Presentation | 2016-04-09 Device simulation analysis of carrier transport in In-Ga-Zn-O thin-film transistors Daichi Koretomo, Tatsuya Toda, Tokiyoshi Matsuda, Mutsumi Kimura, Mamoru Furuta, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | The influence of high carrier concentration region in In-Ga-Zn-O (IGZO ) on the electrical properties of a bottom-gate IGZO TFT was investigated by varying the sheet carrier concentration (Ns). Device simulation and experimental results clarified that the current flow line in the channel and an effective channel length were strongly influenced by the high carrier concentration region formed at a back-channel interface. This result indicated that the IGZO TFT with double active layers can fabricate short channel TFT. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | InGaZnO (IGZO) / Thin-Film transistor (TFT) / Device simulation / ATLAS |
| Paper # | SDM2016-14,OME2016-14 |
| Date of Issue | 2016-04-01 (SDM, OME) |
| Conference Information | |
| Committee | SDM / OME |
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| Conference Date | 2016/4/8(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Okinawa Prefectural Museum & Art Museum |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Thin film devices, etc |
| Chair | Yuzou Oono(Univ. of Tsukuba) / Naoki Matsuda(AIST) |
| Vice Chair | Tatsuya Kunikiyo(Renesas) / Tatsuo Mori(Aichi Inst. of Tech.) |
| Secretary | Tatsuya Kunikiyo(Tohoku Univ.) / Tatsuo Mori(NTT) |
| Assistant | Tadashi Yamaguchi(Renesas) / Hirotake Kajii(Osaka Univ.) / Dai Taguchi(Tokyo Inst. of Tech.) |
| Paper Information | |
| Registration To | Technical Committee on Silicon Device and Materials / Technical Committee on Organic Molecular Electronics |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Device simulation analysis of carrier transport in In-Ga-Zn-O thin-film transistors |
| Sub Title (in English) | Influence of carrier concentration in back-channel region |
| Keyword(1) | InGaZnO (IGZO) |
| Keyword(2) | Thin-Film transistor (TFT) |
| Keyword(3) | Device simulation |
| Keyword(4) | ATLAS |
| 1st Author's Name | Daichi Koretomo |
| 1st Author's Affiliation | Kochi Univercity of Technology(KUT) |
| 2nd Author's Name | Tatsuya Toda |
| 2nd Author's Affiliation | Kochi Univercity of Technology(KUT) |
| 3rd Author's Name | Tokiyoshi Matsuda |
| 3rd Author's Affiliation | Ryukoku University(Ryukoku Univ.) |
| 4th Author's Name | Mutsumi Kimura |
| 4th Author's Affiliation | Ryukoku University(Ryukoku Univ.) |
| 5th Author's Name | Mamoru Furuta |
| 5th Author's Affiliation | Kochi Univercity of Technology(KUT) |
| Date | 2016-04-09 |
| Paper # | SDM2016-14,OME2016-14 |
| Volume (vol) | vol.116 |
| Number (no) | SDM-1,OME-2 |
| Page | pp.pp.57-60(SDM), pp.57-60(OME), |
| #Pages | 4 |
| Date of Issue | 2016-04-01 (SDM, OME) |