| Presentation | 2016-04-08 [Invited Talk] Growth and characterization of Sn-containing group-IV semiconductor thin film Yosuke Shimura, Wakana Takeuchi, Mitsuo Sakashita, Masashi Kurosawa, Osamu Nakatsuka, Shigeaki Zaima, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Strain and energy band structure can be designed in Sn-containing group-IV semiconductor alloys. Moreover, as these new semiconductor materials are compatible with a conventional Si process, they are fascinating materials to be implemented into both electronic and optoelectronic devices to realize an integration of them on a Si substrate. We have achieved to grow those epitaxial layers with stabilized high amount of Sn by non-equilibrium growth and controlling strain. Characterization of binary and ternary Sn-containing group-IV alloys, especially the experimentally confirmed their energy band structure, represents a prospect of monolithic integration of everything on a chip. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Si-photonics / Sn / strain / energy band structure |
| Paper # | SDM2016-5,OME2016-5 |
| Date of Issue | 2016-04-01 (SDM, OME) |
| Conference Information | |
| Committee | SDM / OME |
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| Conference Date | 2016/4/8(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Okinawa Prefectural Museum & Art Museum |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Thin film devices, etc |
| Chair | Yuzou Oono(Univ. of Tsukuba) / Naoki Matsuda(AIST) |
| Vice Chair | Tatsuya Kunikiyo(Renesas) / Tatsuo Mori(Aichi Inst. of Tech.) |
| Secretary | Tatsuya Kunikiyo(Tohoku Univ.) / Tatsuo Mori(NTT) |
| Assistant | Tadashi Yamaguchi(Renesas) / Hirotake Kajii(Osaka Univ.) / Dai Taguchi(Tokyo Inst. of Tech.) |
| Paper Information | |
| Registration To | Technical Committee on Silicon Device and Materials / Technical Committee on Organic Molecular Electronics |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | [Invited Talk] Growth and characterization of Sn-containing group-IV semiconductor thin film |
| Sub Title (in English) | |
| Keyword(1) | Si-photonics |
| Keyword(2) | Sn |
| Keyword(3) | strain |
| Keyword(4) | energy band structure |
| 1st Author's Name | Yosuke Shimura |
| 1st Author's Affiliation | Sizuoka University(Sizuoka Univ.) |
| 2nd Author's Name | Wakana Takeuchi |
| 2nd Author's Affiliation | Nagoya University(Nagoya Univ.) |
| 3rd Author's Name | Mitsuo Sakashita |
| 3rd Author's Affiliation | Nagoya University(Nagoya Univ.) |
| 4th Author's Name | Masashi Kurosawa |
| 4th Author's Affiliation | Nagoya University(Nagoya Univ.) |
| 5th Author's Name | Osamu Nakatsuka |
| 5th Author's Affiliation | Nagoya University(Nagoya Univ.) |
| 6th Author's Name | Shigeaki Zaima |
| 6th Author's Affiliation | Nagoya University(Nagoya Univ.) |
| Date | 2016-04-08 |
| Paper # | SDM2016-5,OME2016-5 |
| Volume (vol) | vol.116 |
| Number (no) | SDM-1,OME-2 |
| Page | pp.pp.23-26(SDM), pp.23-26(OME), |
| #Pages | 4 |
| Date of Issue | 2016-04-01 (SDM, OME) |