Presentation 2016-04-15
[Invited Talk] A 90nm Embedded 1T-MONOS Flash Macro for Automotive Applications with 0.07mJ/8kB Rewrite Energy and Endurance Over 100M Cycles Under Tj of 175°C
Satoru Nakanishi, Hidenori Mitani, Ken Matsubara, Hiroshi Yoshida, Takashi Kono, Yasuhiko Taito, Takashi Ito, Takashi Kurafuji, Kenji Noguchi, Hideto Hidaka, Tadaaki Yamauchi,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) A first-ever 90nm embedded 1T-MONOS Flash macro is presented to realize automotive reliability and simple process integration. Read Disturb Free Array Architecture fully solves conventional read disturb issue in 1T-MONOS for automotive use. Adaptable Slope Pulse Control (ASPC) technique can achieve endurance over 100M cycles at Tj = 175°C and P/E current of only 98uA. Idling P/E Management Unit (IPEMU) scheme can reduce power consumption in Automotive Analog system by 99%.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) for Automotive / embedded Flash memory / high P/E endurance / low power consumption / 1T-MONOS
Paper # ICD2016-15
Date of Issue 2016-04-07 (ICD)

Conference Information
Committee ICD
Conference Date 2016/4/14(2days)
Place (in Japanese) (See Japanese page)
Place (in English) Kikai-Shinko-Kaikan Bldg.
Topics (in Japanese) (See Japanese page)
Topics (in English)
Chair Minoru Fujishima(Hiroshima Univ.)
Vice Chair Hideto Hidaka(Renesas)
Secretary Hideto Hidaka(Hiroshima Univ.)
Assistant Makoto Takamiya(Univ. of Tokyo) / Hiroe Iwasaki(NTT) / Takashi Hashimoto(Panasonic) / Hiroyuki Ito(Tokyo Inst. of Tech.) / Pham Konkuha(Univ. of Electro-Comm.)

Paper Information
Registration To Technical Committee on Integrated Circuits and Devices
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) [Invited Talk] A 90nm Embedded 1T-MONOS Flash Macro for Automotive Applications with 0.07mJ/8kB Rewrite Energy and Endurance Over 100M Cycles Under Tj of 175°C
Sub Title (in English)
Keyword(1) for Automotive
Keyword(2) embedded Flash memory
Keyword(3) high P/E endurance
Keyword(4) low power consumption
Keyword(5) 1T-MONOS
1st Author's Name Satoru Nakanishi
1st Author's Affiliation Renesas Electronics(Renesas)
2nd Author's Name Hidenori Mitani
2nd Author's Affiliation Renesas Electronics(Renesas)
3rd Author's Name Ken Matsubara
3rd Author's Affiliation Renesas Electronics(Renesas)
4th Author's Name Hiroshi Yoshida
4th Author's Affiliation Renesas Electronics(Renesas)
5th Author's Name Takashi Kono
5th Author's Affiliation Renesas Electronics(Renesas)
6th Author's Name Yasuhiko Taito
6th Author's Affiliation Renesas Electronics(Renesas)
7th Author's Name Takashi Ito
7th Author's Affiliation Renesas Electronics(Renesas)
8th Author's Name Takashi Kurafuji
8th Author's Affiliation Renesas Electronics(Renesas)
9th Author's Name Kenji Noguchi
9th Author's Affiliation Renesas Electronics(Renesas)
10th Author's Name Hideto Hidaka
10th Author's Affiliation Renesas Electronics(Renesas)
11th Author's Name Tadaaki Yamauchi
11th Author's Affiliation Renesas Electronics(Renesas)
Date 2016-04-15
Paper # ICD2016-15
Volume (vol) vol.116
Number (no) ICD-3
Page pp.pp.77-81(ICD),
#Pages 5
Date of Issue 2016-04-07 (ICD)