| Presentation | 2016-03-04 Nanoscale domain inversion in ferroelectric Y:HfO2 thin film Zhou Chen, Yoshiomi Hiranaga, Takao Shimizu, Kiriha Katayama, Takanori Mimura, Hiroshi Funakubo, Yasuo Cho, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | In recent years, ferroelectricity in hafnium oxide thin film such as Y:HfO2 thin film has been demonstrated. But until now, there is few researches in which the polarization inversion of ferroelectric thin film at nanoscale has been observed directly. In this research, we used scanning nonlinear dielectric microscopy (SNDM) to observe an epitaxial orientation Y:HfO2 thin film with a thickness of 11nm and performed a domain inversion experiment on it. So that we confirmed that ferroelectricity of Y:HfO2 thin film can be observed by SDNM. And then we applied pulse voltage to the thin film surface by using a very fine probe tip. As a result, dots with diameter of about 26nm were formed. This shows the capability of Y:HfO2 to be used as media of ferroelectric data storage. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Hafnium Oxide Thin Film / Scanning Nonlinear Dielectric Microscopy / Ferroelectric Data Storage |
| Paper # | MR2015-34 |
| Date of Issue | 2016-02-26 (MR) |
| Conference Information | |
| Committee | MR / ITE-MMS / IEE-MAG |
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| Conference Date | 2016/3/4(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Nagoya Univ. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Optical recording, etc. |
| Chair | Masukazu Igarashi(*) / Eiichi Miyashita(NHK) / Masahiro Yamaguchi(Tohoku Univ.) |
| Vice Chair | |
| Secretary | (Syowa Denko) / (Toshiba) / (Hitachi Maxell) |
| Assistant | Fumiko Akagi(Kogakuin Univ.) / Takayuki Shima(AIST) / / Keiju Yamada(Toshiba Co.) |
| Paper Information | |
| Registration To | Technical Committee on Magnetic Recording / Technical Group on Multi-media Storage / Technical Meeting on Magnetics |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Nanoscale domain inversion in ferroelectric Y:HfO2 thin film |
| Sub Title (in English) | |
| Keyword(1) | Hafnium Oxide Thin Film |
| Keyword(2) | Scanning Nonlinear Dielectric Microscopy |
| Keyword(3) | Ferroelectric Data Storage |
| 1st Author's Name | Zhou Chen |
| 1st Author's Affiliation | Tohoku University(Tohoku Univ.) |
| 2nd Author's Name | Yoshiomi Hiranaga |
| 2nd Author's Affiliation | Tohoku University(Tohoku Univ.) |
| 3rd Author's Name | Takao Shimizu |
| 3rd Author's Affiliation | Tokyo Institute of Technology(Tokyo Tech) |
| 4th Author's Name | Kiriha Katayama |
| 4th Author's Affiliation | Tokyo Institute of Technology(Tokyo Tech) |
| 5th Author's Name | Takanori Mimura |
| 5th Author's Affiliation | Tokyo Institute of Technology(Tokyo Tech) |
| 6th Author's Name | Hiroshi Funakubo |
| 6th Author's Affiliation | Tokyo Institute of Technology(Tokyo Tech) |
| 7th Author's Name | Yasuo Cho |
| 7th Author's Affiliation | Tohoku University(Tohoku Univ.) |
| Date | 2016-03-04 |
| Paper # | MR2015-34 |
| Volume (vol) | vol.115 |
| Number (no) | MR-490 |
| Page | pp.pp.29-32(MR), |
| #Pages | 4 |
| Date of Issue | 2016-02-26 (MR) |