Presentation | 2016-03-03 Low-temperature charge pumping for SiO2/Si interface states Tokinobu Watanabe, Masahiro Hori, Yukinori Ono, |
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PDF Download Page | PDF download Page Link |
Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | The charge pumping (CP) currents are measured at 7 – 300 K with a SOI PIN diode. The CP current is found to exhibit a strong polarity dependence of the backgate bias. The dependence of the CP current on the rising/falling time has also a strong polarity dependence of the backgate bias. These results suggest that the low-temperature CP on the SOI devices enables us to obtain the density of state profile near the conduction and valence-band edges separately. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | charge pumping / interface defects / SOI / low-temperature |
Paper # | ED2015-125,SDM2015-132 |
Date of Issue | 2016-02-25 (ED, SDM) |
Conference Information | |
Committee | ED / SDM |
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Conference Date | 2016/3/3(2days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | Centennial Hall, Hokkaido Univ. |
Topics (in Japanese) | (See Japanese page) |
Topics (in English) | Functional Nanodevices and Related Technologies |
Chair | Koichi Maezawa(Univ. of Toyama) / Yuzou Oono(Univ. of Tsukuba) |
Vice Chair | Kunio Tsuda(Toshiba) / Tatsuya Kunikiyo(Renesas) |
Secretary | Kunio Tsuda(NEC) / Tatsuya Kunikiyo(JAIST) |
Assistant | Manabu Arai(New JRC) / Masataka Higashiwaki(NICT) / Tadashi Yamaguchi(Renesas) |
Paper Information | |
Registration To | Technical Committee on Electron Device / Technical Committee on Silicon Device and Materials |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Low-temperature charge pumping for SiO2/Si interface states |
Sub Title (in English) | |
Keyword(1) | charge pumping |
Keyword(2) | interface defects |
Keyword(3) | SOI |
Keyword(4) | low-temperature |
1st Author's Name | Tokinobu Watanabe |
1st Author's Affiliation | University of Toyama(Univ. of Toyama) |
2nd Author's Name | Masahiro Hori |
2nd Author's Affiliation | University of Toyama(Univ. of Toyama) |
3rd Author's Name | Yukinori Ono |
3rd Author's Affiliation | University of Toyama(Univ. of Toyama) |
Date | 2016-03-03 |
Paper # | ED2015-125,SDM2015-132 |
Volume (vol) | vol.115 |
Number (no) | ED-469,SDM-470 |
Page | pp.pp.23-26(ED), pp.23-26(SDM), |
#Pages | 4 |
Date of Issue | 2016-02-25 (ED, SDM) |