Presentation 2016-03-03
Low-temperature charge pumping for SiO2/Si interface states
Tokinobu Watanabe, Masahiro Hori, Yukinori Ono,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) The charge pumping (CP) currents are measured at 7 – 300 K with a SOI PIN diode. The CP current is found to exhibit a strong polarity dependence of the backgate bias. The dependence of the CP current on the rising/falling time has also a strong polarity dependence of the backgate bias. These results suggest that the low-temperature CP on the SOI devices enables us to obtain the density of state profile near the conduction and valence-band edges separately.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) charge pumping / interface defects / SOI / low-temperature
Paper # ED2015-125,SDM2015-132
Date of Issue 2016-02-25 (ED, SDM)

Conference Information
Committee ED / SDM
Conference Date 2016/3/3(2days)
Place (in Japanese) (See Japanese page)
Place (in English) Centennial Hall, Hokkaido Univ.
Topics (in Japanese) (See Japanese page)
Topics (in English) Functional Nanodevices and Related Technologies
Chair Koichi Maezawa(Univ. of Toyama) / Yuzou Oono(Univ. of Tsukuba)
Vice Chair Kunio Tsuda(Toshiba) / Tatsuya Kunikiyo(Renesas)
Secretary Kunio Tsuda(NEC) / Tatsuya Kunikiyo(JAIST)
Assistant Manabu Arai(New JRC) / Masataka Higashiwaki(NICT) / Tadashi Yamaguchi(Renesas)

Paper Information
Registration To Technical Committee on Electron Device / Technical Committee on Silicon Device and Materials
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Low-temperature charge pumping for SiO2/Si interface states
Sub Title (in English)
Keyword(1) charge pumping
Keyword(2) interface defects
Keyword(3) SOI
Keyword(4) low-temperature
1st Author's Name Tokinobu Watanabe
1st Author's Affiliation University of Toyama(Univ. of Toyama)
2nd Author's Name Masahiro Hori
2nd Author's Affiliation University of Toyama(Univ. of Toyama)
3rd Author's Name Yukinori Ono
3rd Author's Affiliation University of Toyama(Univ. of Toyama)
Date 2016-03-03
Paper # ED2015-125,SDM2015-132
Volume (vol) vol.115
Number (no) ED-469,SDM-470
Page pp.pp.23-26(ED), pp.23-26(SDM),
#Pages 4
Date of Issue 2016-02-25 (ED, SDM)