| Presentation | 2016-03-03 Growth and thermoelectric properties of compositionally homogeneous SiGe for nanowire thermopile infrared photodetector Hiroya Ikeda, Muthusamy Omprakash, Yasuhiro Hayakawa, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | With the aim of realizing high-sensitivity thermopile infrared-photodetectors, we have investigated the enhancement of the thermoelectric performance by introducing SiGe nanowires. In the present study, we successfully produced compositionally homogeneous Si1－xGex polycrystals, which is required for fabrication of SiGe nanowires, using a temperature gradient growth method established by ourselves. In-situ x-ray penetration method was used for clarifying the detail growth mechanism, and Si transport due to solutal convection and crystalization position were made clear. In addition, we formed p- and n-type Si1－xGex by doping Ga and Sb, respectively. Their thermoelectric characteristics were also evaluated. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | IR photodetector / thermoelectrics / SiGe / Seebeck coefficient / figure of merit |
| Paper # | ED2015-124,SDM2015-131 |
| Date of Issue | 2016-02-25 (ED, SDM) |
| Conference Information | |
| Committee | ED / SDM |
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| Conference Date | 2016/3/3(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Centennial Hall, Hokkaido Univ. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Functional Nanodevices and Related Technologies |
| Chair | Koichi Maezawa(Univ. of Toyama) / Yuzou Oono(Univ. of Tsukuba) |
| Vice Chair | Kunio Tsuda(Toshiba) / Tatsuya Kunikiyo(Renesas) |
| Secretary | Kunio Tsuda(NEC) / Tatsuya Kunikiyo(JAIST) |
| Assistant | Manabu Arai(New JRC) / Masataka Higashiwaki(NICT) / Tadashi Yamaguchi(Renesas) |
| Paper Information | |
| Registration To | Technical Committee on Electron Device / Technical Committee on Silicon Device and Materials |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Growth and thermoelectric properties of compositionally homogeneous SiGe for nanowire thermopile infrared photodetector |
| Sub Title (in English) | |
| Keyword(1) | IR photodetector |
| Keyword(2) | thermoelectrics |
| Keyword(3) | SiGe |
| Keyword(4) | Seebeck coefficient |
| Keyword(5) | figure of merit |
| 1st Author's Name | Hiroya Ikeda |
| 1st Author's Affiliation | Shizuoka University(Shizuoka Univ.) |
| 2nd Author's Name | Muthusamy Omprakash |
| 2nd Author's Affiliation | Shizuoka University(Shizuoka Univ.) |
| 3rd Author's Name | Yasuhiro Hayakawa |
| 3rd Author's Affiliation | Shizuoka University(Shizuoka Univ.) |
| Date | 2016-03-03 |
| Paper # | ED2015-124,SDM2015-131 |
| Volume (vol) | vol.115 |
| Number (no) | ED-469,SDM-470 |
| Page | pp.pp.19-22(ED), pp.19-22(SDM), |
| #Pages | 4 |
| Date of Issue | 2016-02-25 (ED, SDM) |