Presentation 2016-03-03
[Invited Talk] A Recent Development in Thin-Film Device Applications using Oxide Semiconductors
Toshihiko Maemoto, Yi Sun, Souhei Matsuda, Shota Sasaki, Kouhei Ashida, Oliver Kaltstein, Masatoshi Koyama, Kazuto Koike, Mitsuaki Yano, Shigehiko Sasa,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) We report on the fabrication and characterization of flexible thin-film-transistors using a transparent zinc oxide (ZnO) semiconductor. Characterizations in bending experiments of flexible ZnO-TFTs and DC characteristics for fully transparent ZnO-TFTs were reported. The self-switching nano-diodes (SSD) were fabricated by using electron beam lithography and wet chemical etching at room temperature. ZnO-SSDs on glass substrate and a fully transparent ZnO-SSD were also characterized for transparent device applications.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Zinc oxide / Transparent / Flexible / Thin-film transistor / Self-switching nano-diode
Paper # ED2015-121,SDM2015-128
Date of Issue 2016-02-25 (ED, SDM)

Conference Information
Committee ED / SDM
Conference Date 2016/3/3(2days)
Place (in Japanese) (See Japanese page)
Place (in English) Centennial Hall, Hokkaido Univ.
Topics (in Japanese) (See Japanese page)
Topics (in English) Functional Nanodevices and Related Technologies
Chair Koichi Maezawa(Univ. of Toyama) / Yuzou Oono(Univ. of Tsukuba)
Vice Chair Kunio Tsuda(Toshiba) / Tatsuya Kunikiyo(Renesas)
Secretary Kunio Tsuda(NEC) / Tatsuya Kunikiyo(JAIST)
Assistant Manabu Arai(New JRC) / Masataka Higashiwaki(NICT) / Tadashi Yamaguchi(Renesas)

Paper Information
Registration To Technical Committee on Electron Device / Technical Committee on Silicon Device and Materials
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) [Invited Talk] A Recent Development in Thin-Film Device Applications using Oxide Semiconductors
Sub Title (in English)
Keyword(1) Zinc oxide
Keyword(2) Transparent
Keyword(3) Flexible
Keyword(4) Thin-film transistor
Keyword(5) Self-switching nano-diode
1st Author's Name Toshihiko Maemoto
1st Author's Affiliation Osaka Institute of Technology(Osaka Inst. Tech.)
2nd Author's Name Yi Sun
2nd Author's Affiliation Osaka Institute of Technology(Osaka Inst. Tech.)
3rd Author's Name Souhei Matsuda
3rd Author's Affiliation Osaka Institute of Technology(Osaka Inst. Tech.)
4th Author's Name Shota Sasaki
4th Author's Affiliation Osaka Institute of Technology(Osaka Inst. Tech.)
5th Author's Name Kouhei Ashida
5th Author's Affiliation Osaka Institute of Technology(Osaka Inst. Tech.)
6th Author's Name Oliver Kaltstein
6th Author's Affiliation Osaka Institute of Technology(Osaka Inst. Tech.)
7th Author's Name Masatoshi Koyama
7th Author's Affiliation Osaka Institute of Technology(Osaka Inst. Tech.)
8th Author's Name Kazuto Koike
8th Author's Affiliation Osaka Institute of Technology(Osaka Inst. Tech.)
9th Author's Name Mitsuaki Yano
9th Author's Affiliation Osaka Institute of Technology(Osaka Inst. Tech.)
10th Author's Name Shigehiko Sasa
10th Author's Affiliation Osaka Institute of Technology(Osaka Inst. Tech.)
Date 2016-03-03
Paper # ED2015-121,SDM2015-128
Volume (vol) vol.115
Number (no) ED-469,SDM-470
Page pp.pp.1-6(ED), pp.1-6(SDM),
#Pages 6
Date of Issue 2016-02-25 (ED, SDM)