Presentation	2016-01-28 [Invited Talk] Super Steep Subthreshold Slope PN-Body Tied SOI FET with Ultra Low Drain Voltage Jiro Ida,
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Abstract(in Japanese)	(See Japanese page)
Abstract(in English)	We have proposed the new type super steep subthreshold slope (SS) device of the PN-body tied SOI FET. The N region is inserted on the body tied region of the SOI FET. The hole are intended to inject to the body of the SOI by the PNP bipolar transistor, which start the floating body effect and result in the appearance of the super steep SS. It was confirmed that the super steep SS appears at the ultralow drain voltage of 0.1V at 3 decades of the drain current. It was also confirmed that the device has the good Id-Vd characteristics and the negligible hysteresis characteristics.
Keyword(in Japanese)	(See Japanese page)
Keyword(in English)	Steep subthreshold slope / SOI FET / Floating Body Effect
Paper #	SDM2015-127
Date of Issue	2016-01-21 (SDM)

Conference Information
Committee	SDM
Conference Date	2016/1/28(1days)
Place (in Japanese)	(See Japanese page)
Place (in English)	Kikai-Shinko-Kaikan Bldg.
Topics (in Japanese)	(See Japanese page)
Topics (in English)
Chair	Yuzou Oono(Univ. of Tsukuba)
Vice Chair	Tatsuya Kunikiyo(Renesas)
Secretary	Tatsuya Kunikiyo(Tohoku Univ.)
Assistant	Tadashi Yamaguchi(Renesas)

Paper Information
Registration To	Technical Committee on Silicon Device and Materials
Language	JPN
Title (in Japanese)	(See Japanese page)
Sub Title (in Japanese)	(See Japanese page)
Title (in English)	[Invited Talk] Super Steep Subthreshold Slope PN-Body Tied SOI FET with Ultra Low Drain Voltage
Sub Title (in English)
Keyword(1)	Steep subthreshold slope
Keyword(2)	SOI FET
Keyword(3)	Floating Body Effect
1st Author's Name	Jiro Ida
1st Author's Affiliation	Kanazawa Institute of Technology(Kanazawa Institute of Technology)
Date	2016-01-28
Paper #	SDM2015-127
Volume (vol)	vol.115
Number (no)	SDM-440
Page	pp.pp.31-34(SDM),
#Pages	4
Date of Issue	2016-01-21 (SDM)