Presentation 2016-01-28
[Invited Talk] Carrier Transport Analysis of High-Performance Poly-Si Nanowire Transistor Fabricated by Advanced SPC with Record-High Electron Mobility
Minoru Oda, Kiwamu Sakuma, Yuuichi Kamimuta, Masumi Saitoh,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) High-performance poly-Si nanowire transistors were fabricated by Advanced SPC process, in which the process of forming a poly-Si film is optimized. Temperature and surface carrier density (Ns) dependence of mobility, and also correlation between grain size and mobility are investigated in order to determine what limits the mobility in the poly-Si channel. As a result, it is suggested that the hole mobility is dominated by phonon scattering, and that the electron mobility is dominated by surface roughness scattering at high Ns and coulomb scattering at low Ns which is attributed to defects in grains although scattering at grain boundaries has been thought to be dominant in the poly-Si transistors.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) poly-Si / TFT / mobility / SPC
Paper # SDM2015-121
Date of Issue 2016-01-21 (SDM)

Conference Information
Committee SDM
Conference Date 2016/1/28(1days)
Place (in Japanese) (See Japanese page)
Place (in English) Kikai-Shinko-Kaikan Bldg.
Topics (in Japanese) (See Japanese page)
Topics (in English)
Chair Yuzou Oono(Univ. of Tsukuba)
Vice Chair Tatsuya Kunikiyo(Renesas)
Secretary Tatsuya Kunikiyo(Tohoku Univ.)
Assistant Tadashi Yamaguchi(Renesas)

Paper Information
Registration To Technical Committee on Silicon Device and Materials
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) [Invited Talk] Carrier Transport Analysis of High-Performance Poly-Si Nanowire Transistor Fabricated by Advanced SPC with Record-High Electron Mobility
Sub Title (in English)
Keyword(1) poly-Si
Keyword(2) TFT
Keyword(3) mobility
Keyword(4) SPC
1st Author's Name Minoru Oda
1st Author's Affiliation Toshiba Corporation(Toshiba Corp.)
2nd Author's Name Kiwamu Sakuma
2nd Author's Affiliation Toshiba Corporation(Toshiba Corp.)
3rd Author's Name Yuuichi Kamimuta
3rd Author's Affiliation Toshiba Corporation(Toshiba Corp.)
4th Author's Name Masumi Saitoh
4th Author's Affiliation Toshiba Corporation(Toshiba Corp.)
Date 2016-01-28
Paper # SDM2015-121
Volume (vol) vol.115
Number (no) SDM-440
Page pp.pp.5-8(SDM),
#Pages 4
Date of Issue 2016-01-21 (SDM)