Presentation 2016-01-20
[Invited Lecture] GaN Schottky Barrier Diode and Microwave Power Transmission
Yasuo Ohno,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) GaN based electron devices have high potential for high frequency, high power applications, but applications with high impact has not yet appeared. Meanwhile, attention has been paid on wireless power transmission for battery charging of mobile equipment and electric vehicles. The frequencies they will use are ranging from kHz to GHz. GaN based devices will be suitable for such applications, especially with microwave. In this article, electron devices for microwave power transmission will be explained including the performance and present status of Schottky barrier diode for microwave rectification will be explained.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) microwave / wireless power transmission / GaN / Schottky barrier diode
Paper # ED2015-117
Date of Issue 2016-01-13 (ED)

Conference Information
Committee ED
Conference Date 2016/1/20(1days)
Place (in Japanese) (See Japanese page)
Place (in English) Kikai-Shinko-Kaikan Bldg.
Topics (in Japanese) (See Japanese page)
Topics (in English) Power Devices and High-frequency Devices, Microwave, etc.
Chair Koichi Maezawa(Univ. of Toyama)
Vice Chair Kunio Tsuda(Toshiba)
Secretary Kunio Tsuda(NEC)
Assistant Manabu Arai(New JRC) / Masataka Higashiwaki(NICT)

Paper Information
Registration To Technical Committee on Electron Device
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) [Invited Lecture] GaN Schottky Barrier Diode and Microwave Power Transmission
Sub Title (in English)
Keyword(1) microwave
Keyword(2) wireless power transmission
Keyword(3) GaN
Keyword(4) Schottky barrier diode
1st Author's Name Yasuo Ohno
1st Author's Affiliation Laser Systems, Inc.(LaS)
Date 2016-01-20
Paper # ED2015-117
Volume (vol) vol.115
Number (no) ED-402
Page pp.pp.31-35(ED),
#Pages 5
Date of Issue 2016-01-13 (ED)