| Presentation | 2016-01-20 [Invited Lecture] Estimation of RF-DC conversion efficiency of microwave power Shottky barrier diodes for rectenna by small equivalent circuit model Toshiyuki Oishi, Makoto Kasu, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | RF-DC conversion efficiencies of rectenna using conventional and wide bandgap semiconductors are estimated by small signal equivalent circuit model combined circuit parameters with material parameters. We calculated the RF-DC conversion efficiencies by using parasitic resistances and capacitances estimated from the material parameters. The wide bandgap semiconductors are superior in the RF-DC conversion efficiencies at high operation voltage. Especially, Diamond has the large efficiency of 98 % at the high operation voltage of 150 V and small degradation of efficiency at the higher operation voltages. This properties result from small loss in the on state condition, which is introduced from small on resistances. On the other hand, the parasitic capacitances for the wide bandgap semiconductors are larger than that for the conventional semiconductors such as Si and GaAs. The effect of the decrease of the on resistances overcomes the negative effect of increase of the parasitic capacitances. Therefore, the RF-DC conversion efficiencies expect to improve by adopting the wide bandgap semiconductors, especially diamond. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | wide bandgap semiconductor / RF-DC conversion efficiency / small equivalent circuit model / diamond |
| Paper # | ED2015-116 |
| Date of Issue | 2016-01-13 (ED) |
| Conference Information | |
| Committee | ED |
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| Conference Date | 2016/1/20(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Kikai-Shinko-Kaikan Bldg. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Power Devices and High-frequency Devices, Microwave, etc. |
| Chair | Koichi Maezawa(Univ. of Toyama) |
| Vice Chair | Kunio Tsuda(Toshiba) |
| Secretary | Kunio Tsuda(NEC) |
| Assistant | Manabu Arai(New JRC) / Masataka Higashiwaki(NICT) |
| Paper Information | |
| Registration To | Technical Committee on Electron Device |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | [Invited Lecture] Estimation of RF-DC conversion efficiency of microwave power Shottky barrier diodes for rectenna by small equivalent circuit model |
| Sub Title (in English) | Comparison of semiconductor materials |
| Keyword(1) | wide bandgap semiconductor |
| Keyword(2) | RF-DC conversion efficiency |
| Keyword(3) | small equivalent circuit model |
| Keyword(4) | diamond |
| 1st Author's Name | Toshiyuki Oishi |
| 1st Author's Affiliation | Saga University(Saga Univ.) |
| 2nd Author's Name | Makoto Kasu |
| 2nd Author's Affiliation | Saga University(Saga Univ.) |
| Date | 2016-01-20 |
| Paper # | ED2015-116 |
| Volume (vol) | vol.115 |
| Number (no) | ED-402 |
| Page | pp.pp.25-29(ED), |
| #Pages | 5 |
| Date of Issue | 2016-01-13 (ED) |