Presentation 2016-01-20
[Invited Lecture] Development of GaN-HEMT for Microwave Applications
Takahisa Kawai,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English)
Keyword(in Japanese) (See Japanese page)
Keyword(in English)
Paper # ED2015-120
Date of Issue 2016-01-13 (ED)

Conference Information
Committee ED
Conference Date 2016/1/20(1days)
Place (in Japanese) (See Japanese page)
Place (in English) Kikai-Shinko-Kaikan Bldg.
Topics (in Japanese) (See Japanese page)
Topics (in English) Power Devices and High-frequency Devices, Microwave, etc.
Chair Koichi Maezawa(Univ. of Toyama)
Vice Chair Kunio Tsuda(Toshiba)
Secretary Kunio Tsuda(NEC)
Assistant Manabu Arai(New JRC) / Masataka Higashiwaki(NICT)

Paper Information
Registration To Technical Committee on Electron Device
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) [Invited Lecture] Development of GaN-HEMT for Microwave Applications
Sub Title (in English)
Keyword(1)
1st Author's Name Takahisa Kawai
1st Author's Affiliation Sumitomo Electric Device Innovations, Inc.(SEDI)
Date 2016-01-20
Paper # ED2015-120
Volume (vol) vol.115
Number (no) ED-402
Page pp.pp.49-54(ED),
#Pages 6
Date of Issue 2016-01-13 (ED)