| Presentation | 2016-01-20 [Invited Lecture] The unique features of GaN power devices and the technologies to utilize their innate advantages Ken Nakahara, Kentaro Chikamatsu, Atsushi Yamaguchi, Naotaka Kuroda, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | The GaN power device have a very low value of RonQg as a figure of merit for power devices, where Ron denotes on-state resistance , and Qg gate charge. Therefore the most significant feature of GaN power devices is a high-frequency switching capability. In order to maximize this capability, the parasitic capacitances of GaN power devices should be as low as possible, and an embedded source field-plate structure is introduced. The structure enables the devices to switch in an order of ns. On the other hand, high-frequency switching deteriorates EMC, while it an be a key technology to miniaturize the power supply. Simulations have been developed to design power circuits without violating the EMC standard. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | GaN / source field-plate / high-frequency swtiching / EMC |
| Paper # | ED2015-115 |
| Date of Issue | 2016-01-13 (ED) |
| Conference Information | |
| Committee | ED |
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| Conference Date | 2016/1/20(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Kikai-Shinko-Kaikan Bldg. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Power Devices and High-frequency Devices, Microwave, etc. |
| Chair | Koichi Maezawa(Univ. of Toyama) |
| Vice Chair | Kunio Tsuda(Toshiba) |
| Secretary | Kunio Tsuda(NEC) |
| Assistant | Manabu Arai(New JRC) / Masataka Higashiwaki(NICT) |
| Paper Information | |
| Registration To | Technical Committee on Electron Device |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | [Invited Lecture] The unique features of GaN power devices and the technologies to utilize their innate advantages |
| Sub Title (in English) | |
| Keyword(1) | GaN |
| Keyword(2) | source field-plate |
| Keyword(3) | high-frequency swtiching |
| Keyword(4) | EMC |
| 1st Author's Name | Ken Nakahara |
| 1st Author's Affiliation | ROHM CO., LTD.(ROHM) |
| 2nd Author's Name | Kentaro Chikamatsu |
| 2nd Author's Affiliation | ROHM CO., LTD.(ROHM) |
| 3rd Author's Name | Atsushi Yamaguchi |
| 3rd Author's Affiliation | ROHM CO., LTD.(ROHM) |
| 4th Author's Name | Naotaka Kuroda |
| 4th Author's Affiliation | ROHM CO., LTD.(ROHM) |
| Date | 2016-01-20 |
| Paper # | ED2015-115 |
| Volume (vol) | vol.115 |
| Number (no) | ED-402 |
| Page | pp.pp.19-24(ED), |
| #Pages | 6 |
| Date of Issue | 2016-01-13 (ED) |