Presentation 2016-01-20
[Invited Lecture] State-of-the-art technology of gallium oxide power devices
Masataka Higashiwaki, Man Hoi Wong, Keita Konishi, Kohei Sasaki, Ken Goto, Kazushiro Nomura, Quang Tu Thieu, Rie Togashi, Hisashi Murakami, Yoshinao Kumagai, Bo Monemar, Akinori Koukitu, Akito Kuramata, Takekazu Masui, Shigenobu Yamakoshi,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) Gallium oxide (Ga{$_{2}$}O{$_{3}$}) is one of oxide semiconductors and has excellent material properties for power device applications. Another important advantage of Ga{$_{2}$}O{$_{3}$} is that large-area and high-quality wafers can be produced with simple and low-cost methods. From these features, Ga{$_{2}$}O{$_{3}$} has been attracting much attention as a new wide bandgap semiconductor following SiC and GaN. In this report, we introduce recent main progress of field-plated lateral Ga{$_{2}$}O{$_{3}$} metal-oxide-semiconductor field-effect transistors and vertical Ga{$_{2}$}O{$_{3}$} Schottky barrier diodes with drift layers grown by halide vapor phase epitaxy.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) gallium oxide / field plate / metal-oxide-semiconductor field-effect transistor (MOSFET) / halide vapor phase epitaxy / Schottky barrier diode
Paper # ED2015-114
Date of Issue 2016-01-13 (ED)

Conference Information
Committee ED
Conference Date 2016/1/20(1days)
Place (in Japanese) (See Japanese page)
Place (in English) Kikai-Shinko-Kaikan Bldg.
Topics (in Japanese) (See Japanese page)
Topics (in English) Power Devices and High-frequency Devices, Microwave, etc.
Chair Koichi Maezawa(Univ. of Toyama)
Vice Chair Kunio Tsuda(Toshiba)
Secretary Kunio Tsuda(NEC)
Assistant Manabu Arai(New JRC) / Masataka Higashiwaki(NICT)

Paper Information
Registration To Technical Committee on Electron Device
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) [Invited Lecture] State-of-the-art technology of gallium oxide power devices
Sub Title (in English)
Keyword(1) gallium oxide
Keyword(2) field plate
Keyword(3) metal-oxide-semiconductor field-effect transistor (MOSFET)
Keyword(4) halide vapor phase epitaxy
Keyword(5) Schottky barrier diode
1st Author's Name Masataka Higashiwaki
1st Author's Affiliation National Institute of Information and Communications Technology(NICT)
2nd Author's Name Man Hoi Wong
2nd Author's Affiliation National Institute of Information and Communications Technology(NICT)
3rd Author's Name Keita Konishi
3rd Author's Affiliation National Institute of Information and Communications Technology(NICT)
4th Author's Name Kohei Sasaki
4th Author's Affiliation Tamura Corporation/National Institute of Information and Communications Technology(Tamura/NICT)
5th Author's Name Ken Goto
5th Author's Affiliation Tamura Corporation/Tokyo University of Agriculture and Technology(Tamura/TAT)
6th Author's Name Kazushiro Nomura
6th Author's Affiliation Tokyo University of Agriculture and Technology(TAT)
7th Author's Name Quang Tu Thieu
7th Author's Affiliation Tokyo University of Agriculture and Technology(TAT)
8th Author's Name Rie Togashi
8th Author's Affiliation Tokyo University of Agriculture and Technology(TAT)
9th Author's Name Hisashi Murakami
9th Author's Affiliation Tokyo University of Agriculture and Technology(TAT)
10th Author's Name Yoshinao Kumagai
10th Author's Affiliation Tokyo University of Agriculture and Technology(TAT)
11th Author's Name Bo Monemar
11th Author's Affiliation Tokyo University of Agriculture and Technology(TAT)
12th Author's Name Akinori Koukitu
12th Author's Affiliation Tokyo University of Agriculture and Technology(TAT)
13th Author's Name Akito Kuramata
13th Author's Affiliation Tamura Corporation(Tamura)
14th Author's Name Takekazu Masui
14th Author's Affiliation Tamura Corporation(Tamura)
15th Author's Name Shigenobu Yamakoshi
15th Author's Affiliation Tamura Corporation(Tamura)
Date 2016-01-20
Paper # ED2015-114
Volume (vol) vol.115
Number (no) ED-402
Page pp.pp.13-18(ED),
#Pages 6
Date of Issue 2016-01-13 (ED)