| Presentation | 2016-01-29 Design and Analysis of Class-E Amplifier with MOSFET Nonlinear Parasitic Capacitances Xiuqin Wei, |
|---|---|
| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | |
| Paper # | EE2015-19 |
| Date of Issue | 2016-01-21 (EE) |
| Conference Information | |
| Committee | EE |
|---|---|
| Conference Date | 2016/1/28(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | KURUME HOTEL ESPRIT |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | Satoshi Ohtsu(NTT Facilities Research Inst.) |
| Vice Chair | Masatoshi Nakahara(Sojo Univ.) |
| Secretary | Masatoshi Nakahara(Fukuoka Univ.) |
| Assistant | Nobuhiko Yamashita(NTT) |
| Paper Information | |
| Registration To | Technical Committee on Energy Engineering in Electronics and Communications |
|---|---|
| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Design and Analysis of Class-E Amplifier with MOSFET Nonlinear Parasitic Capacitances |
| Sub Title (in English) | |
| Keyword(1) | |
| 1st Author's Name | Xiuqin Wei |
| 1st Author's Affiliation | Nagasaki University(Nagasaki Univ.) |
| Date | 2016-01-29 |
| Paper # | EE2015-19 |
| Volume (vol) | vol.115 |
| Number (no) | EE-429 |
| Page | pp.pp.61-66(EE), |
| #Pages | 6 |
| Date of Issue | 2016-01-21 (EE) |