| Presentation | 2016-01-20 [Invited Lecture] Improvement in fmax of InP-based HEMTs for THz ICs Tsuyoshi Takahashi, Yoichi Kawano, Kozo Makiyama, Shoichi Shiba, Yasuhiro Nakasha, Naoki Hara, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | High performance THz receivers should be required to realize high-speed wireless radio communications systems for increased data transmission. We developed THz ICs that have a power gain of 23 dB at 300 GHz band by utilizing high-speed InP-based HEMTs. The HEMT improved both cutoff frequency (fT) and maximum frequency of oscillation (fmax) by adopting a cavity structure around the gate region to decrease parasitic capacitances even though they are fully passivated with dielectric films after multilayer interconnections. Mostly, the fmax, i.e. power gain, is important for operating multi-stage amplifiers. We achieved an fmax of 660 GHz after modifying epitaxial layer and device structures. Further improvement in fmax was expected by employing modified device structure. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | InP HEMT / THz / parasitic capacitance / cavity / cutoff frequency / fmax / gain / drain conductance |
| Paper # | ED2015-118 |
| Date of Issue | 2016-01-13 (ED) |
| Conference Information | |
| Committee | ED |
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| Conference Date | 2016/1/20(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Kikai-Shinko-Kaikan Bldg. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Power Devices and High-frequency Devices, Microwave, etc. |
| Chair | Koichi Maezawa(Univ. of Toyama) |
| Vice Chair | Kunio Tsuda(Toshiba) |
| Secretary | Kunio Tsuda(NEC) |
| Assistant | Manabu Arai(New JRC) / Masataka Higashiwaki(NICT) |
| Paper Information | |
| Registration To | Technical Committee on Electron Device |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | [Invited Lecture] Improvement in fmax of InP-based HEMTs for THz ICs |
| Sub Title (in English) | |
| Keyword(1) | InP HEMT |
| Keyword(2) | THz |
| Keyword(3) | parasitic capacitance |
| Keyword(4) | cavity |
| Keyword(5) | cutoff frequency |
| Keyword(6) | fmax |
| Keyword(7) | gain |
| Keyword(8) | drain conductance |
| 1st Author's Name | Tsuyoshi Takahashi |
| 1st Author's Affiliation | Fujitsu Laboratories Ltd.(Fujitsu Labs.) |
| 2nd Author's Name | Yoichi Kawano |
| 2nd Author's Affiliation | Fujitsu Laboratories Ltd.(Fujitsu Labs.) |
| 3rd Author's Name | Kozo Makiyama |
| 3rd Author's Affiliation | Fujitsu Laboratories Ltd.(Fujitsu Labs.) |
| 4th Author's Name | Shoichi Shiba |
| 4th Author's Affiliation | Fujitsu Laboratories Ltd.(Fujitsu Labs.) |
| 5th Author's Name | Yasuhiro Nakasha |
| 5th Author's Affiliation | Fujitsu Laboratories Ltd.(Fujitsu Labs.) |
| 6th Author's Name | Naoki Hara |
| 6th Author's Affiliation | Fujitsu Laboratories Ltd.(Fujitsu Labs.) |
| Date | 2016-01-20 |
| Paper # | ED2015-118 |
| Volume (vol) | vol.115 |
| Number (no) | ED-402 |
| Page | pp.pp.37-41(ED), |
| #Pages | 5 |
| Date of Issue | 2016-01-13 (ED) |