| Presentation | 2016-01-20 [Invited Lecture] Low On-resistance SiC-MOSFET with Blocking Voltage of 3.3kV and Realization of the World's First All-SiC Traction Inverter Kenji Hamada, Shiro Hino, Naruhisa Miura, Hiroshi Watanabe, Shuhei Nakata, Eisuke Suekawa, Yuji Ebiike, Masayuki Imaizumi, Isao Umezaki, Satoshi Yamakawa, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | For the further efficiency improvement of existing power modules for railcar traction, we have developed MOSFETs with a rated voltage of 3.3 kV by using SiC, which are expected as next-generation power semiconductor materials. The specific on-resistance of the MOSFET was reduced considerably with an original technique, which formed n-type doping layer into JFET region of the MOSFET. The world’s first all-SiC traction inverter utilizing this technique has been produced, and it have been verified to achieve an approximate 40% savings in power consumption compared to conventional systems. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | 3.3kV / 4H-SiC / MOSFET / inverter |
| Paper # | ED2015-113 |
| Date of Issue | 2016-01-13 (ED) |
| Conference Information | |
| Committee | ED |
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| Conference Date | 2016/1/20(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Kikai-Shinko-Kaikan Bldg. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Power Devices and High-frequency Devices, Microwave, etc. |
| Chair | Koichi Maezawa(Univ. of Toyama) |
| Vice Chair | Kunio Tsuda(Toshiba) |
| Secretary | Kunio Tsuda(NEC) |
| Assistant | Manabu Arai(New JRC) / Masataka Higashiwaki(NICT) |
| Paper Information | |
| Registration To | Technical Committee on Electron Device |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | [Invited Lecture] Low On-resistance SiC-MOSFET with Blocking Voltage of 3.3kV and Realization of the World's First All-SiC Traction Inverter |
| Sub Title (in English) | |
| Keyword(1) | 3.3kV |
| Keyword(2) | 4H-SiC |
| Keyword(3) | MOSFET |
| Keyword(4) | inverter |
| 1st Author's Name | Kenji Hamada |
| 1st Author's Affiliation | Mitsubishi Electric Corporation(Mitsubishi Electric) |
| 2nd Author's Name | Shiro Hino |
| 2nd Author's Affiliation | Mitsubishi Electric Corporation(Mitsubishi Electric) |
| 3rd Author's Name | Naruhisa Miura |
| 3rd Author's Affiliation | Mitsubishi Electric Corporation(Mitsubishi Electric) |
| 4th Author's Name | Hiroshi Watanabe |
| 4th Author's Affiliation | Mitsubishi Electric Corporation(Mitsubishi Electric) |
| 5th Author's Name | Shuhei Nakata |
| 5th Author's Affiliation | Mitsubishi Electric Corporation(Mitsubishi Electric) |
| 6th Author's Name | Eisuke Suekawa |
| 6th Author's Affiliation | Mitsubishi Electric Corporation(Mitsubishi Electric) |
| 7th Author's Name | Yuji Ebiike |
| 7th Author's Affiliation | Mitsubishi Electric Corporation(Mitsubishi Electric) |
| 8th Author's Name | Masayuki Imaizumi |
| 8th Author's Affiliation | Mitsubishi Electric Corporation(Mitsubishi Electric) |
| 9th Author's Name | Isao Umezaki |
| 9th Author's Affiliation | Mitsubishi Electric Corporation(Mitsubishi Electric) |
| 10th Author's Name | Satoshi Yamakawa |
| 10th Author's Affiliation | Mitsubishi Electric Corporation(Mitsubishi Electric) |
| Date | 2016-01-20 |
| Paper # | ED2015-113 |
| Volume (vol) | vol.115 |
| Number (no) | ED-402 |
| Page | pp.pp.7-12(ED), |
| #Pages | 6 |
| Date of Issue | 2016-01-13 (ED) |