| Presentation | 2016-01-28 Characterization of 1.3-μm npn-AlGaInAs/InP Transistor Laser with Buried Heterostructure Shotaro Tadano, Takaaki Kaneko, Kentaro Yamanaka, Nobuhiko Nishiyama, Shigehisa Arai, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Since a long-wavelength transistor lasers（TL）has 3 electrical terminals, which are different from the conventional LDs, it allows to operate with several terminal configurations. In this paper, we observed output power control by the collector-base voltage VCB with common base configuration and suppression of the collector current increasing due to stimulated emission after the threshold current. We also obtained current gain β improvement by thinning the p-GaInAsP base layer thanks to suppression of carrier recombination in the p-GaInAsP base layer. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | semiconductor laser / high speed / buried heterostructure / transistor laser |
| Paper # | PN2015-38,EMT2015-89,OPE2015-151,LQE2015-138,EST2015-95,MWP2015-64 |
| Date of Issue | 2016-01-21 (PN, EMT, OPE, LQE, EST, MWP) |
| Conference Information | |
| Committee | LQE / EST / OPE / EMT / PN / MWP / IEE-EMT |
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| Conference Date | 2016/1/28(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | Hajime Shoji(Sumitomo Electric Industries) / Tatsuya Kashiwa(Kitami Inst. of Tech.) / Hiroyuki Uenohara(Tokyo Inst. of Tech.) / Motoyuki Sato(Tohoku Univ.) / Eiji Oki(Univ. of Electro-Comm.) / Yuichi Kado(Kyoto Inst. of Tech.) / Masahiro Tanaka(Gifu Univ.) |
| Vice Chair | Susumu Noda(Kyoto Univ.) / Hideaki Kimura(NTT) / Akimasa Hirata(Nagoya Inst. of Tech.) / Shinichiro Ohnuki(Nihon Univ.) / Kensuke Ogawa(Fujikura) / Akira Hirose(Univ. of Tokyo) / Hiroshi Hasegawa(Nagoya Univ.) / Takehiro Tsuritani(KDDI Labs.) / Haruki Ogoshi(Furukawa Electric) / Tetsuya Kawanishi(NICT) / Hiroyuki Toda(Doshisha Univ.) |
| Secretary | Susumu Noda(NICT) / Hideaki Kimura(NTT) / Akimasa Hirata(Tokyo Inst. of Tech.) / Shinichiro Ohnuki(Muroran Inst. of Tech.) / Kensuke Ogawa(Fujitsu Labs.) / Akira Hirose(NTT) / Hiroshi Hasegawa(Niigata Univ.) / Takehiro Tsuritani(Mitsubishi Electric) / Haruki Ogoshi(NICT) / Tetsuya Kawanishi(Osaka Univ.) / Hiroyuki Toda(ENRI) / (NTT) |
| Assistant | / Atsushi Kezuka(ENRI) / Kenji Taguchi(Kitami Inst. of Tech.) / Takaaki Ishigure(Keio Univ.) / Eiji Yagyu(Mitsubishi Electric) / Kazunori Takahashi(Tohoku Univ.) / Masahiro Nakagawa(NTT) / Kensuke Ikeda(CRIEPI) / Atsushi Kanno(NICT) / Yoshihiro Naka(KUHW) |
| Paper Information | |
| Registration To | Technical Committee on Lasers and Quantum Electronics / Technical Committee on Electronics Simulation Technology / Technical Committee on Optoelectronics / Technical Committee on Electromagnetic Theory / Technical Committee on Photonic Network / Technical Committee on Microwave and Millimeter-wave Photonics / Technical Meeting on Electromagnetic Theory |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Characterization of 1.3-μm npn-AlGaInAs/InP Transistor Laser with Buried Heterostructure |
| Sub Title (in English) | |
| Keyword(1) | semiconductor laser |
| Keyword(2) | high speed |
| Keyword(3) | buried heterostructure |
| Keyword(4) | transistor laser |
| 1st Author's Name | Shotaro Tadano |
| 1st Author's Affiliation | Tokyo Institute of Technology(Tokyo Tech) |
| 2nd Author's Name | Takaaki Kaneko |
| 2nd Author's Affiliation | Tokyo Institute of Technology(Tokyo Tech) |
| 3rd Author's Name | Kentaro Yamanaka |
| 3rd Author's Affiliation | Tokyo Institute of Technology(Tokyo Tech) |
| 4th Author's Name | Nobuhiko Nishiyama |
| 4th Author's Affiliation | Tokyo Institute of Technology(Tokyo Tech) |
| 5th Author's Name | Shigehisa Arai |
| 5th Author's Affiliation | QNERC, Tokyo Institute of Technology(Tokyo Tech) |
| Date | 2016-01-28 |
| Paper # | PN2015-38,EMT2015-89,OPE2015-151,LQE2015-138,EST2015-95,MWP2015-64 |
| Volume (vol) | vol.115 |
| Number (no) | PN-430,EMT-431,OPE-432,LQE-433,EST-434,MWP-435 |
| Page | pp.pp.21-26(PN), pp.21-26(EMT), pp.21-26(OPE), pp.21-26(LQE), pp.21-26(EST), pp.21-26(MWP), |
| #Pages | 6 |
| Date of Issue | 2016-01-21 (PN, EMT, OPE, LQE, EST, MWP) |