| Presentation | 2015-12-14 Memory Application of Ultrafine FET utilizing Supramolecular Protein Takahiko Ban, Mutsunori Uenuma, Shinji Migita, Yasuaki Ishikawa, Ichiro Yamashita, Yukiharu Uraoka, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Metal nanoparticles (NPs) embedded in junctionless field-effect transistors (JL-FETs) with a length of 3.6 nm is fabricated and demonstrated. The anisotropic wet etching of a silicon-on-insulator (SOI) substrate was utilized to form V-grooves and to define nanometer-scale channel. Metal NPs are selectively placed onto bottom of V-groove using the Baio nano process (BNP). The JL-FET is applied to floating gate memory and used to investigate an impact on the short channel by charge trap of NPs. Low-voltage operation and broad threshold voltage shift as memory behavior are appeared in 3.6 nm channel length. It is expected that the JL-FETs can overcome the scaling limitations in floating gate memory, while the charge trap cause major problems in the sub 10 nm region. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Bio Nano Process / Junctionless-FET / Nano-particle / Memory |
| Paper # | EID2015-11,SDM2015-94 |
| Date of Issue | 2015-12-07 (EID, SDM) |
| Conference Information | |
| Committee | EID / SDM |
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| Conference Date | 2015/12/14(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Ryukoku University, Avanti Kyoto Hall |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Si and Si-related Materials and Devices, and Display Technology |
| Chair | Tomokazu Shiga(Univ. of Electro-Comm.) / Yuzou Oono(Univ. of Tsukuba) |
| Vice Chair | Mutsumi Kimura(Ryukoku Univ.) / Yuko Kominami(Shizuoka Univ.) / Tatsuya Kunikiyo(Renesas) |
| Secretary | Mutsumi Kimura(NTT) / Yuko Kominami(Tokyo Inst. of Tech.) / Tatsuya Kunikiyo(Tohoku Univ.) |
| Assistant | Rumiko Yamaguchi(Akita Univ.) / Hiroyuki Nitta(Japan Display) / Mitsuru Nakata(NHK) / Takashi Kojiri(ZEON) / Ryosuke Nonaka(Toshiba) / Takeshi Okuno(Samsung) / Tadashi Yamaguchi(Renesas) |
| Paper Information | |
| Registration To | Technical Committee on Electronic Information Displays / Technical Committee on Silicon Device and Materials |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Memory Application of Ultrafine FET utilizing Supramolecular Protein |
| Sub Title (in English) | |
| Keyword(1) | Bio Nano Process |
| Keyword(2) | Junctionless-FET |
| Keyword(3) | Nano-particle |
| Keyword(4) | Memory |
| 1st Author's Name | Takahiko Ban |
| 1st Author's Affiliation | Nara Insutitute of Science and Technology(NAIST) |
| 2nd Author's Name | Mutsunori Uenuma |
| 2nd Author's Affiliation | Nara Insutitute of Science and Technology(NAIST) |
| 3rd Author's Name | Shinji Migita |
| 3rd Author's Affiliation | National Institute of Advanced Industrial Science and Technology(AIST) |
| 4th Author's Name | Yasuaki Ishikawa |
| 4th Author's Affiliation | Nara Insutitute of Science and Technology(NAIST) |
| 5th Author's Name | Ichiro Yamashita |
| 5th Author's Affiliation | Nara Insutitute of Science and Technology(NAIST) |
| 6th Author's Name | Yukiharu Uraoka |
| 6th Author's Affiliation | Nara Insutitute of Science and Technology(NAIST) |
| Date | 2015-12-14 |
| Paper # | EID2015-11,SDM2015-94 |
| Volume (vol) | vol.115 |
| Number (no) | EID-362,SDM-363 |
| Page | pp.pp.9-12(EID), pp.9-12(SDM), |
| #Pages | 4 |
| Date of Issue | 2015-12-07 (EID, SDM) |