| Presentation | 2015-12-21 Effect of Temperature on DC and RF Characteristics of Cryogenic InP HEMTs Akira Endoh, Issei Watanabe, Akifumi Kasamatsu, Tsuyoshi Takahashi, Shoichi Shiba, Yasuhiro Nakasha, Taisuke Iwai, Takashi Mimura, |
|---|---|
| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We measured the DC and RF characteristics of InP-based 75-nm-gate In0.52Al0.48As/In0.63Ga0.37As HEMTs at 300, 220, 150, 100, 77 and 16 K and clarified the effect of temperature on improvement of DC and RF performance. The obvious kink phenomenon is seen in the drain-source current vs. drain-source voltage (Ids-Vds) characteristics with decreasingtemperature. The maximum transconductance gm increases with decreasing temperature between 300 and 77 K and shows the almost same value at 100 and 77 K. At 16 K, the decrease in gm is seen. The decrease in gm at 16 K may result from the kink phenomenon. Cutoff frequency fT and maximum oscillation frequency fmax increase with decreasing temperature. The increase of fmax with decreasing temperature is more than that of fT. The fmax largely increases between 150 and 100 K. Furthermore, the increase of fT and fmax values is very small between 77 and 16 K. This suggests that operating InP HEMTs at 77 K is sufficient to increase fT and fmax values. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | HEMTs / InP / InAlAs/InGaAs / Cryogenic characteristics / Transconductance / Cutoff frequency / Maximum oscillation frequency |
| Paper # | ED2015-92 |
| Date of Issue | 2015-12-14 (ED) |
| Conference Information | |
| Committee | ED |
|---|---|
| Conference Date | 2015/12/21(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | RIEC, Tohoku Univ |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Millimeter-wave, terahertz-wave devices and systems |
| Chair | Koichi Maezawa(Univ. of Toyama) |
| Vice Chair | Kunio Tsuda(Toshiba) |
| Secretary | Kunio Tsuda(NEC) |
| Assistant | Manabu Arai(New JRC) / Masataka Higashiwaki(NICT) |
| Paper Information | |
| Registration To | Technical Committee on Electron Device |
|---|---|
| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Effect of Temperature on DC and RF Characteristics of Cryogenic InP HEMTs |
| Sub Title (in English) | |
| Keyword(1) | HEMTs |
| Keyword(2) | InP |
| Keyword(3) | InAlAs/InGaAs |
| Keyword(4) | Cryogenic characteristics |
| Keyword(5) | Transconductance |
| Keyword(6) | Cutoff frequency |
| Keyword(7) | Maximum oscillation frequency |
| 1st Author's Name | Akira Endoh |
| 1st Author's Affiliation | National Institute of Information and Communications Technology/Fujitsu Laboratories Ltd.(NICT/Fujitsu Labs.) |
| 2nd Author's Name | Issei Watanabe |
| 2nd Author's Affiliation | National Institute of Information and Communications Technology(NICT) |
| 3rd Author's Name | Akifumi Kasamatsu |
| 3rd Author's Affiliation | National Institute of Information and Communications Technology(NICT) |
| 4th Author's Name | Tsuyoshi Takahashi |
| 4th Author's Affiliation | Fujitsu Laboratories Ltd.(Fujitsu Labs.) |
| 5th Author's Name | Shoichi Shiba |
| 5th Author's Affiliation | Fujitsu Laboratories Ltd.(Fujitsu Labs.) |
| 6th Author's Name | Yasuhiro Nakasha |
| 6th Author's Affiliation | Fujitsu Laboratories Ltd.(Fujitsu Labs.) |
| 7th Author's Name | Taisuke Iwai |
| 7th Author's Affiliation | Fujitsu Laboratories Ltd.(Fujitsu Labs.) |
| 8th Author's Name | Takashi Mimura |
| 8th Author's Affiliation | Fujitsu Laboratories Ltd./National Institute of Information and Communications Technology(Fujitsu Labs./NICT) |
| Date | 2015-12-21 |
| Paper # | ED2015-92 |
| Volume (vol) | vol.115 |
| Number (no) | ED-387 |
| Page | pp.pp.7-11(ED), |
| #Pages | 5 |
| Date of Issue | 2015-12-14 (ED) |