Presentation 2015-12-18
Electromagnetic-field analysis simulation for the improvement of light extraction efficiency in III-nitride LEDs
Satoshi Ozaki, Atsushi A. Yamaguchi, Hiroki Goto, Akira Usui,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) The efficiency droop phenomenon is a big problem for high-brightness white LEDs. It has been pointed out that the problem could be solved by the reduction of threading dislocation density in underlying GaN films (templates or substrates). Nano-channel facet-initiated epitaxial lateral overgrowth (nano-FIELO) technique has been developed as a low-cost fabrication method of such high-quality GaN templates. In this study, we have proposed that the SiO2 mask structures used for selective growth in the nano-FIELO GaN templates can also be useful for improving light extraction efficiency of LEDs, and we demonstratively optimized the mask structures (period, width, and thickness) by electromagnetic-field analysis simulation.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Nitride / Semiconductor / LED / Light extraction efficiency / FDTD
Paper # LQE2015-123
Date of Issue 2015-12-11 (LQE)

Conference Information
Committee LQE
Conference Date 2015/12/18(1days)
Place (in Japanese) (See Japanese page)
Place (in English)
Topics (in Japanese) (See Japanese page)
Topics (in English)
Chair Hajime Shoji(Sumitomo Electric Industries)
Vice Chair Susumu Noda(Kyoto Univ.)
Secretary Susumu Noda(NICT)
Assistant

Paper Information
Registration To Technical Committee on Lasers and Quantum Electronics
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Electromagnetic-field analysis simulation for the improvement of light extraction efficiency in III-nitride LEDs
Sub Title (in English)
Keyword(1) Nitride
Keyword(2) Semiconductor
Keyword(3) LED
Keyword(4) Light extraction efficiency
Keyword(5) FDTD
1st Author's Name Satoshi Ozaki
1st Author's Affiliation Kanazawa Institute of Technology(Kanazawa Inst. Tech.)
2nd Author's Name Atsushi A. Yamaguchi
2nd Author's Affiliation Kanazawa Institute of Technology(Kanazawa Inst. Tech.)
3rd Author's Name Hiroki Goto
3rd Author's Affiliation Furukawa Co., Ltd.(Furukawa Co., Ltd.)
4th Author's Name Akira Usui
4th Author's Affiliation Furukawa Co., Ltd.(Furukawa Co., Ltd.)
Date 2015-12-18
Paper # LQE2015-123
Volume (vol) vol.115
Number (no) LQE-378
Page pp.pp.1-4(LQE),
#Pages 4
Date of Issue 2015-12-11 (LQE)