| Presentation | 2015-12-21 Detector Characteristics of GaAsSb-based Backward Diode Monolithically Integrated with InP-based HEMTs for 300 GHz Receiver Applications Tsuyoshi Takahashi, Masaru Sato, Shoichi Shiba, Kozo Makiyama, Yasuhiro Nakasha, Naoki Hara, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We have developed receiver MMIC structure that was integrated with GaAsSb-based backward diodes and InP-based HEMTs to detect THz wave with high sensitivity. Sensitivity of 1,390 V/W was achieved at 300 GHz by adopting a matching network at the backward diodes to make an impedance matching with InP-based HEMTs. Highly sensitive THz receivers should be realized by integrating the backward diodes with InP-based HEMTs. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | tunnel diode / backward / THz / HEMT / GaAsSb / detection / sensitivity / InP |
| Paper # | ED2015-94 |
| Date of Issue | 2015-12-14 (ED) |
| Conference Information | |
| Committee | ED |
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| Conference Date | 2015/12/21(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | RIEC, Tohoku Univ |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Millimeter-wave, terahertz-wave devices and systems |
| Chair | Koichi Maezawa(Univ. of Toyama) |
| Vice Chair | Kunio Tsuda(Toshiba) |
| Secretary | Kunio Tsuda(NEC) |
| Assistant | Manabu Arai(New JRC) / Masataka Higashiwaki(NICT) |
| Paper Information | |
| Registration To | Technical Committee on Electron Device |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Detector Characteristics of GaAsSb-based Backward Diode Monolithically Integrated with InP-based HEMTs for 300 GHz Receiver Applications |
| Sub Title (in English) | |
| Keyword(1) | tunnel diode |
| Keyword(2) | backward |
| Keyword(3) | THz |
| Keyword(4) | HEMT |
| Keyword(5) | GaAsSb |
| Keyword(6) | detection |
| Keyword(7) | sensitivity |
| Keyword(8) | InP |
| 1st Author's Name | Tsuyoshi Takahashi |
| 1st Author's Affiliation | Fujitsu Laboratories Ltd.(Fujitsu Labs.) |
| 2nd Author's Name | Masaru Sato |
| 2nd Author's Affiliation | Fujitsu Laboratories Ltd.(Fujitsu Labs.) |
| 3rd Author's Name | Shoichi Shiba |
| 3rd Author's Affiliation | Fujitsu Laboratories Ltd.(Fujitsu Labs.) |
| 4th Author's Name | Kozo Makiyama |
| 4th Author's Affiliation | Fujitsu Laboratories Ltd.(Fujitsu Labs.) |
| 5th Author's Name | Yasuhiro Nakasha |
| 5th Author's Affiliation | Fujitsu Laboratories Ltd.(Fujitsu Labs.) |
| 6th Author's Name | Naoki Hara |
| 6th Author's Affiliation | Fujitsu Laboratories Ltd.(Fujitsu Labs.) |
| Date | 2015-12-21 |
| Paper # | ED2015-94 |
| Volume (vol) | vol.115 |
| Number (no) | ED-387 |
| Page | pp.pp.19-23(ED), |
| #Pages | 5 |
| Date of Issue | 2015-12-14 (ED) |