Presentation 2015-12-21
Extraction of intrinsic parameters in graphene-channel FET
Gen Tamamushi, Kenta Sugawara, Akira Sato, Keiichiro Tashima, Hirokazu Fukidome, Maki Suemitsu, Taiichi Otsuji,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) We fabricate and characterize the graphene-channel FETs (G-FETs) made of high-quality epitaxial graphene (EG) grown by thermal decomposition of a semi-insulating 4H-SiC(0001 ̅) substrate. To resolve the problems of a conventional method for extracting the intrinsic G-FET parameters, we develop a new model accounting for the tunneling and thermionic-emission resistances at n-i and n-p junctions in the G-FET channel. We then extract the intrinsic parameters by curve-fitting the measured current-voltage transfer characteristics.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Graphene / FET / tunneling resistance / thermionic-emission resistance / fitting / mobility
Paper # ED2015-95
Date of Issue 2015-12-14 (ED)

Conference Information
Committee ED
Conference Date 2015/12/21(2days)
Place (in Japanese) (See Japanese page)
Place (in English) RIEC, Tohoku Univ
Topics (in Japanese) (See Japanese page)
Topics (in English) Millimeter-wave, terahertz-wave devices and systems
Chair Koichi Maezawa(Univ. of Toyama)
Vice Chair Kunio Tsuda(Toshiba)
Secretary Kunio Tsuda(NEC)
Assistant Manabu Arai(New JRC) / Masataka Higashiwaki(NICT)

Paper Information
Registration To Technical Committee on Electron Device
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Extraction of intrinsic parameters in graphene-channel FET
Sub Title (in English)
Keyword(1) Graphene
Keyword(2) FET
Keyword(3) tunneling resistance
Keyword(4) thermionic-emission resistance
Keyword(5) fitting
Keyword(6) mobility
1st Author's Name Gen Tamamushi
1st Author's Affiliation Tohoku University(Tohoku Univ.)
2nd Author's Name Kenta Sugawara
2nd Author's Affiliation Tohoku University(Tohoku Univ.)
3rd Author's Name Akira Sato
3rd Author's Affiliation Tohoku University(Tohoku Univ.)
4th Author's Name Keiichiro Tashima
4th Author's Affiliation Tohoku University(Tohoku Univ.)
5th Author's Name Hirokazu Fukidome
5th Author's Affiliation Tohoku University(Tohoku Univ.)
6th Author's Name Maki Suemitsu
6th Author's Affiliation Tohoku University(Tohoku Univ.)
7th Author's Name Taiichi Otsuji
7th Author's Affiliation Tohoku University(Tohoku Univ.)
Date 2015-12-21
Paper # ED2015-95
Volume (vol) vol.115
Number (no) ED-387
Page pp.pp.25-30(ED),
#Pages 6
Date of Issue 2015-12-14 (ED)